We investigated the relationship between the formation of small grains and the distribution of precipitates such as
Si3normalN4
and SiON in a multicrystalline silicon ingot grown by the unidirectional solidification method.
Si3normalN4
precipitates were mainly observed inside the small grain region, while SiON was mainly precipitated outside the small grain region. SiON started to precipitate before the formation of
Si3normalN4
precipitates. Therefore, precipitation of SiON before precipitation of
Si3normalN4
is a candidate in the formation of small grains.
In this paper, results of global computation in a three-dimensional configuration for transverse magnetic field-applied Czochralski method to study distributions of temperature and impurity concentration are presented. The analysis includes a re-melting and segregation model at an interface between a crystal and the melt. Deflection of an interface between a crystal and the melt is also taken into account. Time-dependent global analysis of the solidification process of a silicon ingot for photovoltaic is described in this paper. This model includes distributions of dislocation, impurity and point defects for a quasi-single silicon ingot grown by the solidification method. Heat and mass transfers in a square crucible are also discussed.
We investigated the relationship between the formation of small grains and distribution of precipitates such as Si3N4 and SiON in a multicrystalline silicon ingot grown by the unidirectional solidification method. Si3N4 precipitate was mainly observed inside the small grain region, while SiON was mainly precipitated outside there. We found that SiON started to precipitate prior to formation of Si3N4 precipitates. Therefore, precipitation of SiON prior to precipitation of Si3N4 plays a key role in the formation of small grains.
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