Numerical analysis of the formation of Si3N4 and Si2N2O during a directional solidification process in multicrystalline silicon for solar cells

Modeling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters

“…However, the authors do not consider CO incorporation from the gas phase and carbon contamination from the crucible coating. Hisamatsu et al [10] focused their simulation work on the ternary phase diagram Si-O-N and the formation of silicon oxynitride as initial phase for silicon nitride formation.…”

Crystal growth of semiconductor bulk crystals

“…Arafune et al reported that SiC and Si3N4 were concentrated at the grain boundaries between small grains [20], suggesting that these are one of the causes of the generation of small grains. Small grains have been reported to reduce the conversion efficiency of solar cells and should therefore be removed.…”

Numerical simulations of bulk crystal growth on different scales: silicon and GeSi

“…92. The transport of two other prominent impurities, namely oxygen and nitrogen, was recently investigated with the same furnace 103. Due to the ternary phase diagram the variety of reactions in the melt becomes richer: several reactions can occur, representing the formation Si 3 N 4 and Si 2 N 2 O.…”

“…These species form precipitates, but in the simulation no nucleation is considered and they are treated as normal concentrations but without advective transport. Hisamatsu et al 103 applied temperature‐dependent equilibrium concentrations of oxygen and nitrogen in the rate equation at crucible walls and a flux boundary condition at the free surface for oxygen (oxygen evaporation). At the melt/solid interface oxygen and nitrogen segregate with coefficients k = 0.85 and 0.0007, respectively.…”