We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on melt-crystal interface shape using three-dimensional global analyses. It was found that thermal conductivity of the wall of a crucible has significant influence on the melt-crystal interface shape due to modification of the amount of outgoing heat flux through the wall of a crucible.The results indicate that we should control not only heater power, growth velocity, and melt flow but also thermophysical properties of the wall of a crucible in order to reduce deformation of the melt-crystal interface.
Heat and mass transfer during crystal growth of bulk Si and nitrides by using numerical analysis was studied. A three-dimensional analysis was carried out to investigate temperature distribution and solid-liquid interface shape of silicon for large-scale integrated circuits and photovoltaic silicon. The analysis enables prediction of the solid-liquid interface shape of silicon crystals. The result shows that the interface shape became bevel like structure in the case without crystal rotation. We also carried out analysis of nitrogen transfer in gallium melt during crystal growth of gallium nitride using liquid-phase epitaxy. The result shows that the growth rate at the center was smaller than that at the center.
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