Numerical analysis of influence of crucible shape on interface shape in a unidirectional solidification process

Miyazawa, Hiroaki; Liu, Lijun; Kakimoto, Koichi

doi:10.1016/j.jcrysgro.2007.12.056

Cited by 32 publications

(18 citation statements)

References 11 publications

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“…Many studies on optimization of a unidirectional process of crystalline silicon for solar cells have been carried out [3][4][5][6][7][8][9][10][11]. Liu calculated time-dependent distribution of iron and temperature [3], carbon concentration and SiC particle precipitation [4] in a silicon ingot.…”

Section: Introductionmentioning

confidence: 99%

“…Liu calculated time-dependent distribution of iron and temperature [3], carbon concentration and SiC particle precipitation [4] in a silicon ingot. The melt-solid interface shapes of a silicon ingot in unidirectional solidification and casting processes were studied by Vizman et al [5] and Miyazawa et al [6,7]. The relative movement of various parts of furnace was considered in a global 3D time-dependent numerical simulation by Delannoy et al [8].…”

Section: Introductionmentioning

confidence: 99%

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Study on thermal stress in a silicon ingot during a unidirectional solidification process

Chen

Nakano

Liu

et al. 2008

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study on thermal stress in a silicon ingot during a unidirectional solidification process

Chen

Nakano

Liu

et al. 2008

Journal of Crystal Growth

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“…The computation method used for 3D global analysis is the same that used for 2D global analysis. Figure 4.11a [22] shows the m-c interface shape and temperature distribution of the melt and crystal obtained by 3D global analysis. The m-c interface shape in the case of using square crucibles also becomes concave to the melt.…”

Section: Three-dimensional Effects Of Solidificationmentioning

confidence: 99%

“…The m-c interface shape in the case of using square crucibles also becomes concave to the melt. Figure 4.12 [22] shows the heat flux distribution on the vertical wall of the melt and crystal in the case of using square crucibles. We found that outgoing heat flux near the corner of the crucible becomes larger than that in other areas because cooling of the melt around the corner is enhanced due to two adjacent crucible walls near the corner.…”

Section: Three-dimensional Effects Of Solidificationmentioning

confidence: 99%

Crystallization of Silicon by a Directional Solidification Method

Kakimoto

2009

Advances in Materials Research

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Abstract. This chapter introduces crystallization process of multicrystalline silicon by using a directional solidification method. Numerical analysis, which includes convective, conductive, and radiative heat transfers in the furnace is also introduced. Moreover, a model of impurity segregation is included in this chapter. A new model for three-dimensional (3D) global simulation of heat transfer in a unidirectional solidification furnace with square crucibles was also introduced. Directional Solidification Method: Strengths and WeaknessesMulticrystalline silicon (mc-Si) has a large demand of photovoltaics to overcome difficulty of the present green problem [1]. The directional solidification method is a key method for large-scale production of mc-Si in highly efficient solar cells. The maximum efficiency of the solar cell based on mc-Si is 18%. However, the use of commercially available wafers typically results in solar cell efficiency of about 16% in industrial solar cell processes.There are many problems that must be solved to achieve high efficiency. Mc-Si has many dislocations and grain boundaries that are introduced during the solidification process. Moreover, Mc-Si crystals are grown in a crucible, a process that degrades purity of the crystals due to their attachment to the crucible wall. Such defects and impurity can reduce the conversion efficiency of solar cells. Therefore, we should control distributions of dislocations, grain boundaries, and impurities during the solidification process. In the recent studies, quasi single crystal or multicrystalline with large grain size have been grown by using a modified directional solidification methods [2,3].The directional solidification process has several merits. Square-shaped crystalline silicon can be grown by using a square-shaped crucible. When round-shaped crystals grown by the Czochralski method are used as raw materials for square-shaped solar cells, a large amount of waste of silicon materials

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“…With the development of modern computer technology, numerical simulation has been developed as a powerful tool for the analysis of stresses and dislocations in grown crystals during the unidirectional solidification process [2][3][4][5][6][7][8][9]. There have been several works on two-dimensional (2D) global simulation of a unidirectional solidification process with cylindrical crucibles; however, a square crucible is used to obtain a square-shaped crystal, which has been commonly used to fit the square shape of silicon wafers for solar cells.…”

Section: Introductionmentioning

confidence: 99%

3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells

Chen

Nakano

Kakimoto

2011

Journal of Crystal Growth

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Numerical analysis of influence of crucible shape on interface shape in a unidirectional solidification process

Cited by 32 publications

References 11 publications

Study on thermal stress in a silicon ingot during a unidirectional solidification process

Study on thermal stress in a silicon ingot during a unidirectional solidification process

Crystallization of Silicon by a Directional Solidification Method

3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells

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