3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells

Chen, X. J.; Nakano, Satoshi; Kakimoto, Koichi

doi:10.1016/j.jcrysgro.2010.10.067

Cited by 15 publications

(10 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The crucible thermal conductivity can be varied in a large range in different studies and for different materials [6,[9][10][11][12][13]17]. Besides, the crucible thermal conductivity can also be changed by adjusting the porosity.…”

Section: Model Descriptionmentioning

confidence: 99%

“…Miyazawa et al [9] numerically investigated the influence of thermal conductivity of the crucible wall on the melt-crystal interface shape and found that the interface shape is very sensitive to the thermal conductivity due to the modification of outgoing heat flux through the crucible wall. Chen et al [10] showed that the changes of melt-crystal interface and temperature gradient due to different crucible thermal conductivities have significant influence on the thermal stress and dislocations in the silicon ingot. For different crucible materials, Bellmann et al [11] found that the difference between the thermal conductivity of quartz and silicon nitride crucibles can lead to different thermal histories during the melting and growing stages of the DS process.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Liu

Zhang

et al. 2016

International Journal of Photoenergy

View full text Add to dashboard Cite

We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS) process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.

show abstract

Section: Model Descriptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Liu

Zhang

et al. 2016

International Journal of Photoenergy

View full text Add to dashboard Cite

show abstract

“…Simulations carried out over the years have associated the local dislocation density either to total local stress in excess of the critical resolved shear stress (CRSS) [3], or to the time-dependent plastic deformation in the cooling crystal, following the Alexander and Haasen model [4]. Apart from multiplication of existing dislocations, experimental observations suggest that nucleation of dislocation clusters at the SLI is an additional formation mechanism.…”

Section: Experimentally Observed Challenges To Ml-si Productionmentioning

confidence: 99%

Optimizing seeded casting of mono-like silicon crystals through numerical simulation

Black

Zárate‐Medina

Piñeiro

et al. 2012

Journal of Crystal Growth

View full text Add to dashboard Cite

“…[27][28][29][30] We observed the generation and propagation of small-angle grain boundaries related to light elemental impurities. Thus, we assume that there are several origins of the small-angle grain boundaries consisting of dislocations and that they are generated both during and after solidification.…”

Section: -2mentioning

confidence: 99%

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Tachibana

Sameshima

Kojima

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Although crystalline silicon is widely used as substrate material for solar cell, many defects occur during crystal growth. In this study, the generation of crystalline defects in silicon substrates was evaluated. The distributions of small-angle grain boundaries were observed in substrates sliced parallel to the growth direction. Many precipitates consisting of light elemental impurities and small-angle grain boundaries were confirmed to propagate. The precipitates mainly consisted of Si, C, and N atoms. The small-angle grain boundaries were distributed after the precipitation density increased. Then, precipitates appeared at the small-angle grain boundaries. We consider that the origin of the small-angle grain boundaries was lattice mismatch and/or strain caused by the high-density precipitation. V C 2012 American Institute of Physics. [http://dx

show abstract

3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells

Cited by 15 publications

References 16 publications

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Optimizing seeded casting of mono-like silicon crystals through numerical simulation

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Contact Info

Product

Resources

About