Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Tachibana, Takeshi; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi

doi:10.1063/1.3700250

Cited by 26 publications

(8 citation statements)

References 29 publications

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“…This result could be supported by previous works. 22,23 Tachibana et al investigated that small-angle GB, which consists of aligned dislocations, appeared from precipitates related to Carbon and Nitrogen impurities. They considered that lattice mismatch and/or the strain field caused by the precipitation were the origins of the smallangle GBs.…”

Section: Resultsmentioning

confidence: 99%

Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot

Takahashi

Joonwichien

Matsushima

et al. 2015

Journal of Applied Physics

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We suggested the possibility to suppress dislocation generation by controlling the microstructure of dendrite crystals in practical size Si wafers grown by the floating cast method. With the floating cast method, the contact angle between adjacent dendrite crystals can be used as a structural parameter to define grain boundaries (GBs). We fabricated a practical size silicon ingot fully covered with dendrite crystals and investigated dislocation density near the GBs as a function of the contact angle. The dislocation density was found to decrease with decreasing contact angle. This result can be explained by differences in shear stress on {111} slip surface around the GBs, as supported by numerical calculations considering various structural parameters in multicrystalline Si. These results confirm our previous results with laboratory-scale ingots, and we believe this concept can be applied to commercial growth processes.

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Section: Resultsmentioning

confidence: 99%

Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot

Takahashi

Joonwichien

Matsushima

et al. 2015

Journal of Applied Physics

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“…The wetting behavior depended on the Si 3 N 4 coating was reported by several researchers [21,22]. The effects of the precipitated Si 3 N 4 particles are quite serious in both the casting method and the noncontact crucible method because such Si 3 N 4 particles generate small-angle grain boundaries and dislocations in the ingots in the casting method [23,24] and act as nucleation sites of grains in the noncontact crucible method [4][5][6].…”

Section: Introductionmentioning

confidence: 83%

Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method

Nakajima¹,

Morishita²,

Murai³

et al. 2014

Journal of Crystal Growth

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A noncontact crucible method was used to investigate the process by which a Si 3 N 4 coating material forms Si 3 N 4 particles or precipitates on the surface of Si melts and ingots. Si ingots were grown using crucibles with and without a mixture of α-and β-Si 3 N 4 particles. The oxygen and nitrogen concentrations in the ingots were measured by Fourier transform infrared spectrometry analysis. The nitrogen concentration in the ingots grown using crucibles with a Si 3 N 4 coating was significantly higher than that in ingots grown using crucibles without a Si 3 N 4 coating because the nitrogen from the Si 3 N 4 coating material dissolved into the Si melt. From orientation image maps analyzed using electron backscattering diffraction patterns of Si x N y particles on the surface of the ingots, it was clarified that most of the Si x N y particles were β-Si 3 N 4. This was also confirmed by X-ray diffraction measurements. The Si 3 N 4 particles on the surface of the ingots had several morphologies such as needle-like, columnar, leaf-like, and hexagonal structures. There were two cases in which floating Si 3 N 4 particles were formed on the surface of the Si melts, i.e., the removal and dissolution of the Si 3 N 4 coating material. The removed or dissolved Si 3 N 4 coating materials, which consisted of a mixture of α-and β-Si 3 N 4 particles, are considered to have finally changed into β-Si 3 N 4 in the form of transformers or precipitates on the surface of the Si melt, and these β-Si 3 N 4 particles became attached to the surface of the ingots.

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“…In casting, the melted raw material is transferred from its original crucible to another crucible for solidification. The crystallographic defects due to impurity precipitates have been studied by SEM, EDX, EBSD and EBIC [55]. Furthermore, scanning infrared polariscope (SIRP) has been used for characterization of residual strain distribution in casting ingot [56].…”

Section: Castingmentioning

confidence: 99%

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Seigneur

Mohajeri

Brooker

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the first in a three-part series of manufacturing metrology for c-Si photovoltaic (PV) module reliability and durability. Here in Part 1 we focus on the three primary process steps for making silicon substrates for PV cells: (1) feedstock production; (2) ingot and brick production; and (3) wafer production. Each of these steps can affect the final reliability/durability of PV modules in the field with manufacturing metrology potentially playing a significant role. This article provides a comprehensive overview of historical and current processes in each of these three steps, followed by a discussion of associated reliability challenges and metrology strategies that can be employed for increased reliability and durability in resultant modules. Gaps in the current state of understanding in connective metrology data during processing to reliability/durability in the field are then identified along with suggested improvements that should be considered by the PV community.

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Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Cited by 26 publications

References 29 publications

Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot

Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot

Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

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