Numerical Investigation of the Influence of Material Property of a Crucible on Interface Shape in a Unidirectional Solidification Process

Abstract

We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on melt-crystal interface shape using three-dimensional global analyses. It was found that thermal conductivity of the wall of a crucible has significant influence on the melt-crystal interface shape due to modification of the amount of outgoing heat flux through the wall of a crucible.The results indicate that we should control not only heater power, growth velocity, and melt flow but also thermophysical properties of the wall of a crucible in order to reduce deformation of the melt-crystal interface.

3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells

“…4(b) becomes more flat than that with large thermal conductivity shown in Fig. 4(a) due to different heat flux for two cases [10]. The distribution shows that temperature gradient in axial direction in the case with small thermal conductivity is larger than that with large thermal conductivity.…”

“…Three-dimensional (3D) global modeling is therefore necessary for the investigation of stresses and dislocations in a silicon ingot with a square crucible. The influence of tilt of crucibles, crucible shape and material property of a crucible on the m-c interface shape in a unidirectional solidification process have been studied by 3D global modeling [5,6,10]. However, there have been no works to investigate the influence of crucible on thermal stresses and dislocation density in a grown crystal using 3D global analysis.…”

Optimizing seeded casting of mono-like silicon crystals through numerical simulation

“…Farther out from the center, the SLI becomes increasingly convex, before curving upwards near the lateral edge of the crucible, resulting in a concave SLI. This lateral upwards curvature is characteristic of Bridgman growths, and is due to the escape of latent heat of solidification through the crucible side walls, an effect which can be mitigated by insulating the crucible [26]. The Seed1 case has the most curved interface, being more convex than either one of the other cases.…”

Local design of the hot-zone in an industrial seeded directional solidification furnace for quasi-single crystalline silicon ingots

“…Su et al [7] numerically analyzed the influences of the geometries of the argon flow guide, heat shields and insulations on the thermal field in a Cz growth system for solar-grade single crystal silicon. Miyazawa et al [8,9] investigated the influences of shape, dimensions and material property of crucibles on the interface shape in a DS process. Wei et al [10] and Ma et al [11] made comparisons of the isothermal shape and energy usage in growth systems with and without partition.…”