Numerical investigation of crystal growth process of bulk Si and nitrides – a review

Kakimoto, Koichi; Liu, L.; Miyazawa, Hiroaki; Nakano, Satoshi; Kashiwagi, Daikuke; Chen, X. J.; Kangawa, Yoshihiro

doi:10.1002/crat.200711004

Cited by 5 publications

(3 citation statements)

References 21 publications

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“…The developed simulator has been used successfully in quantitatively predicting the 3D features of a crystal growth. It has also been applied to a variety of crystal growth processes, such as solution growth for GaN [12,13], the PVT method for SiC [14,15], CZ growth, and DS processes for Si crystals [10,11,[16][17][18][19][20][21][22]. To improve the efficiency and accuracy of the global simulation, we also develop a structured/unstructured combined mesh scheme.…”

Section: Introductionmentioning

confidence: 99%

Computer modeling of crystal growth of silicon for solar cells

Liu

et al. 2011

Front. Energy

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A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator.Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

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Section: Introductionmentioning

confidence: 99%

Computer modeling of crystal growth of silicon for solar cells

Liu

et al. 2011

Front. Energy

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“…The simulation code has also been successfully been used for a variety of crystal growth processes, such as solution growth for GaN (13,14), PVT method for SiC (15,16), and CZ growth and directional solidification processes for Si crystals (11,12,(17)(18)(19)(20)(21)(22)(23). In this paper, application of the simulator to a CZ growth process and a directional solidification process for Si crystals, the two major production methods for crystalline Si for solar cells, is introduced.…”

Section: Introductionmentioning

confidence: 99%

Heat and Impurity Transfer Mechanisms of Czochralski and Directional Solidification Processes

et al. 2009

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In this paper, results of global computation in a three-dimensional configuration for transverse magnetic field-applied Czochralski method to study distributions of temperature and impurity concentration are presented. The analysis includes a re-melting and segregation model at an interface between a crystal and the melt. Deflection of an interface between a crystal and the melt is also taken into account. Time-dependent global analysis of the solidification process of a silicon ingot for photovoltaic is described in this paper. This model includes distributions of dislocation, impurity and point defects for a quasi-single silicon ingot grown by the solidification method. Heat and mass transfers in a square crucible are also discussed.

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“…The developed simulator has successfully been used to quantitatively predict the 3D features of a crystal growth. It has also successfully been used for a variety of crystal growth processes, such as solution growth for GaN [14,15], PVT method for SiC [16,17], CZ growth and directional solidification processes for Si crystals [12,13,[18][19][20][21][22][23][24]. In this paper, the application of the simulator to a CZ growth process and a directional solidification process for Si crystals, the two major production methods for crystalline Si for solar cells, is introduced.…”

mentioning

confidence: 99%

Modeling and simulation of Si crystal growth from melt

Liu

Miyazawa

Nakano

et al. 2009

Phys. Status Solidi (c)

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A numerical simulator was developed with a global model of heat transfer for any crystal growth taking place at high temperature. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite volume method. A three‐dimensional (3D) global model was especially developed for simulation of heat transfer in any crystal growth with 3D features. The model enables 3D global simulation be conducted with moderate requirement of computer resources. The application of this numerical simulator to a CZ growth and a directional solidification process for Si crystals, the two major production methods for crystalline Si for solar cells, was introduced. Some typical results were presented, showing the importance and effectiveness of numerical simulation in analyzing and improving these kinds of Si crystal growth processes from melt. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Numerical investigation of crystal growth process of bulk Si and nitrides – a review

Cited by 5 publications

References 21 publications

Computer modeling of crystal growth of silicon for solar cells

Computer modeling of crystal growth of silicon for solar cells

Heat and Impurity Transfer Mechanisms of Czochralski and Directional Solidification Processes

Modeling and simulation of Si crystal growth from melt

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