A global simulation model is applied for a silicon carbide growth system heated by induction coils. A finitevolume method (FVM) and a global model are applied to solve the equations for electromagnetic field, conductive and radiative heat transfer. The growth rate is predicted by Hertz-Knudsen equation and onedimensional mass transfer equation. Further, simulations for five different coil positions are carried out to investigate the effects of coil position on temperature distribution in the furnace. The numerical results reveal that the variation of temperature in the radial direction along the substrate surface and the temperature difference between the powder and substrate are greatly affected by the coil position. The predicted growth rate along the substrate surface for five coil positions is also studied. Finally, a reasonable range of coil positions maintaining a balance between large-diameter crystal, high growth rate, temperature limitation of material and lower electrical power consumption is obtained.
In this paper, results of global computation in a three-dimensional configuration for transverse magnetic field-applied Czochralski method to study distributions of temperature and impurity concentration are presented. The analysis includes a re-melting and segregation model at an interface between a crystal and the melt. Deflection of an interface between a crystal and the melt is also taken into account. Time-dependent global analysis of the solidification process of a silicon ingot for photovoltaic is described in this paper. This model includes distributions of dislocation, impurity and point defects for a quasi-single silicon ingot grown by the solidification method. Heat and mass transfers in a square crucible are also discussed.
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