Optimization of the design of a crucible for a SiC sublimation growth system using a global model

Chen, X. J.; Liu, L. J.; Tezuka, Hiroaki; Usuki, Y.; Kakimoto, Koichi

doi:10.1016/j.jcrysgro.2007.11.016

Cited by 21 publications

(14 citation statements)

References 14 publications

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“…For configurations of the furnace, refer to the paper [16]. The AlN PVT growth system consists of AlN powder, a graphite crucible, an insulation shield, a graphite pedestal, and induction coils.…”

Section: Configurations Of the Furnacementioning

confidence: 99%

The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AlN crystals

Gao

Nakano

Kakimoto

2012

Journal of Crystal Growth

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a b s t r a c tTo effectively design a large furnace for producing large-size AlN crystals, a fully coupled compressible flow solver was developed to study the sublimation and mass transport processes in AlN crystal growth. Compressible effect, buoyancy effects, flow coupling between aluminum gas and nitrogen gas, and Stefan effect are included. Two sets of experimental data were used to validate the present solver. Simulation results showed that the distributions of Al and N 2 partial pressures are opposite along the axial direction due to constant total pressure and Stefan effect, with the Al and nitrogen partial pressures being highest at the source and seed crystals positions, respectively. The distributions of species inside the growth chamber are obviously two-dimensional, which can curve a flat crystal surface. Simulation results also showed that AlN crystal growth rate can be increased by reducing total pressure or by increasing seed temperature or by increasing source-seed temperature difference. High nitrogen pressure causes decrease in growth rate, but it is beneficial for obtaining uniform growth rate in the radial direction. Results of simulation also showed that there is an optimized temperature difference (40 1C) in the present furnace for obtaining good homogeneity of growth rate.

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Section: Configurations Of the Furnacementioning

confidence: 99%

The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AlN crystals

Gao

Nakano

Kakimoto

2012

Journal of Crystal Growth

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“…For configurations of the furnace, refer to Ref. [16]. The SiC PVT growth system consists of SiC powder, a graphite crucible, an insulation shield, a graphite pedestal and induction coils.…”

Section: Configurations Of the Furnacementioning

confidence: 99%

“…The radiative heat exchange is modeled on the basis of the assumption of diffuse-gray surface radiation [16]. For the present initial stage, a steady-state process is assumed.…”

Section: Global Heat Transfermentioning

confidence: 99%

Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation

Gao

Chen

Nakano

et al. 2010

Journal of Crystal Growth

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“…The developed simulator has been used successfully in quantitatively predicting the 3D features of a crystal growth. It has also been applied to a variety of crystal growth processes, such as solution growth for GaN [12,13], the PVT method for SiC [14,15], CZ growth, and DS processes for Si crystals [10,11,[16][17][18][19][20][21][22]. To improve the efficiency and accuracy of the global simulation, we also develop a structured/unstructured combined mesh scheme.…”

Section: Introductionmentioning

confidence: 99%

Computer modeling of crystal growth of silicon for solar cells

Liu

et al. 2011

Front. Energy

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A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator.Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

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Optimization of the design of a crucible for a SiC sublimation growth system using a global model

Cited by 21 publications

References 14 publications

The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AlN crystals

The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AlN crystals

Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation

Computer modeling of crystal growth of silicon for solar cells

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