As the size of semiconductor devices continues to shrink, the normally random distribution of the individual dopant atoms within the semiconductor becomes a critical factor in determining device performance--homogeneity can no longer be assumed. Here we report the fabrication of semiconductor devices in which both the number and position of the dopant atoms are precisely controlled. To achieve this, we make use of a recently developed single-ion implantation technique, which enables us to implant dopant ions one-by-one into a fine semiconductor region until the desired number is reached. Electrical measurements of the resulting transistors reveal that device-to-device fluctuations in the threshold voltage (Vth; the turn-on voltage of the device) are less for those structures with ordered dopant arrays than for those with conventional random doping. We also find that the devices with ordered dopant arrays exhibit a shift in Vth, relative to the undoped semiconductor, that is twice that for a random dopant distribution (- 0.4 V versus -0.2 V); we attribute this to the uniformity of electrostatic potential in the conducting channel region due to the ordered distribution of dopant atoms. Our results therefore serve to highlight the improvements in device performance that can be achieved through atomic-scale control of the doping process. Furthermore, ordered dopant arrays of this type may enhance the prospects for realizing silicon-based solid-state quantum computers.
The cross sections of the ^{7}Be(n,α)^{4}He reaction for p-wave neutrons were experimentally determined at E_{c.m.}=0.20-0.81 MeV slightly above the big bang nucleosynthesis (BBN) energy window for the first time on the basis of the detailed balance principle by measuring the time-reverse reaction. The obtained cross sections are much larger than the cross sections for s-wave neutrons inferred from the recent measurement at the n_TOF facility in CERN, but significantly smaller than the theoretical estimation widely used in the BBN calculations. The present results suggest the ^{7}Be(n,α)^{4}He reaction rate is not large enough to solve the cosmological lithium problem, and this conclusion agrees with the recent result from the direct measurement of the s-wave cross sections using a low-energy neutron beam and the evaluated nuclear data library ENDF/B-VII.1.
We present a simple method for improving the field emission performance of tungsten-tip electron sources based on single-walled carbon nanotube (SWCNT) modification. By coating a sandwich-like thin film of Al–Fe–Al (with Fe as a catalyst) on a tungsten tip, SWCNTs were synthesized at 600 °C in a chemical vapor deposition (CVD) reactor. The influence of CNT modification on the electron emission characteristics of the emitters was investigated by means of a triode structure. We have found that CNT-modified tungsten tips exhibit low threshold-voltage for electron emission, and improved emission-current stability, compared with nonmodified and Al–Fe–Al-coated needles.
Two-step recessed SiGe-S/D pMOSFET [1] has been optimized with a combination of compressive stress liner. Optimization on source and drain overlap, defect control and elevated SiGe-S/D structure are discussed experimentally. As a result of the careful optimization, record high drive current of 714 �A/�m at Vdd=1.0V, Ioff =100 nA/�m at 24 nm gate length, is demonstrated.
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