Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy.

This paper describes the internal structure of Au-Pd nanoparticles exhibiting newly discovered three-layer core/shell morphology, which is composed of an evenly alloyed inner core, an Au-rich intermediate layer, and a Pd-rich outer shell. By exploitation of spatially resolved imaging and spectroscopic and diffraction modes of transmission electron microscopy (TEM), insights were gained on the composition of each one of the observed three layers, indicating a significant extent of intimate alloy among the monometallic elements.

As environmental regulations increase, more selective transition metal sulfide (TMS) catalytic materials for hydrotreating applications are needed. Highly active TMS catalysts become more and more desirable triggering new interest for unsupported Co-promoted MoS 2 -based systems that have high volumetric activity as reported here. Contrary to the common observation for alumina-supported MoS 2 -based catalysts, we found in our previous studies with dibenzothiophene (DBT) hydrodesulfurization (HDS) that the catalytic activity is directly proportional to the increase of surface area of the sulfide phases (Co 9 S 8 and MoS 2 ) present in Co-promoted MoS 2 unsupported catalysts. This suggests that activity is directly connected with an increase of the contact surface area between the two sulfide phases. Understanding of the nature of the possible interaction between MoS 2 and Co 9 S 8 in unsupported catalytic systems is therefore critical in order to get a more generalized overview of the causes for synergy. This has been achieved herein through the detailed characterization by XRD, XPS, and HRTEM of the highly active Co 9 S 8 / MoS 2 catalyst resulting in a proposed model for a Co 9 S 8 /MoS 2 interface. This model was then subjected to a DFT analysis to determine a reasonable description of the surface contact region between the two bulk phases. Modelling of the interface shows the creation of open latent vacancy sites on Mo atoms interacting with Co and formation of direct Co-Mo bonds. Strong electron donation from Co to Mo also occurs through the intermediate sulfur atom bonded to both metals while an enhanced metallic character is also found. These changes in coordination and electronic properties are expected to favor a synergetic effect between Co and Mo at the proposed localized interface region between the two bulk MoS 2 and Co 9 S 8 phases.

We investigate the scaling of Al2O3 dielectric on graphene by atomic layer deposition (ALD) using ultra-thin, oxidized Ti and Al films as nucleation layers. We show that the nucleation layer significantly impacts the dielectric constant (k) and morphology of the ALD Al2O3, yielding k = 5.5 and k = 12.7 for Al and Ti nucleation layers, respectively. Transmission electron microscopy shows that Al2O3 grown using the Ti interface is partially crystalline, while Al2O3 grown on Al is amorphous. Using a spatially uniform 0.6 nm-thick Ti nucleation layer, we demonstrate graphene field-effect transistors with top dielectric stacks as thin as 2.6 nm.

We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function of density in a graphene monolayer, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening in graphene. We find that the N = 0 Landau level broadening is larger by comparison to the broadening of upper and lower Landau levels.

We demonstrate the synthesis of large-area graphene on Co, a complementary metal-oxide-semiconductor (CMOS)-compatible metal, using acetylene (C(2)H(2)) as a precursor in a chemical vapor deposition (CVD)-based method. Cobalt films were deposited on SiO(2)/Si, and the influence of Co film thickness on monolayer graphene growth was studied, based on the solubility of C in Co. The surface area coverage of monolayer graphene was observed to increase with decreasing Co film thickness. A thorough Raman spectroscopic analysis reveals that graphene films, grown on an optimized Co film thickness, are principally composed of monolayer graphene. Transport properties of monolayer graphene films were investigated by fabrication of back-gated graphene field-effect transistors (GFETs), which exhibited high hole and electron mobility of ∼1600 cm(2)/V s and ∼1000 cm(2)/V s, respectively, and a low trap density of ∼1.2 × 10(11) cm(-2).

Silver nanocrystals (Ag NCs) hold promising antibiotic and antiviral properties in biological systems. The biodistribution of silver nanostructures injected into animals in vivo is currently unknown, remaining as a fundamental issue for potential therapeutic applications. Here, we injected Ag NCs capped with bovine serum albumin (BSA) in live rats to elucidate their fate in several organs including liver, heart and brain. Very significant accumulations of nanoparticles were confirmed by inductively coupled plasma mass spectroscopy (ICPMS) and transmission electron microscopy (TEM) techniques on the liver and heart. In contrast, the brain tissue did not reveal evidence of particles content. Our results suggest that Ag+ permeated across the blood-brain barrier (BBB), and followed swift clearance from the organ.

High surface area, porous titanium carbide (TiC) films have been synthesized employing physical vapor deposition of titanium at glancing angles under high vacuum within an ethylene ambient. The composition, surface area, and morphology of the TiC films were studied as a function of deposition conditions including ethylene pressure, titanium deposition angle, substrate temperature during growth, and postdeposition annealing temperature. At high or glancing deposition angles (∼80−85°) synthesis produces films composed of arrays of porous nanocolumns of TiC, while deposition at more moderate angles, less than 70°, results in continuous, reticulated films. The maximum specific surface area (840 m2/g) is obtained by growth with an incident titanium deposition angle of 65°, an ethylene pressure of 1.5 × 10−7 Torr, and a substrate growth temperature of ∼350 K. This result is in contrast to previous investigations using related physical vapor deposition techniques which have generally shown that films with the greatest porosity and surface area are grown by deposition at cryogenic temperatures (T ≤ 77 K). The fact that the surface area is maximized at this uncharacteristically high growth temperature implies that thermally induced decomposition of ethylene and the subsequent desorption of reaction byproducts are important steps for the synthesis of these materials. Not only does deposition of TiC at 350 K result in high specific surface areas, but electron diffraction measurements indicate that these films are polycrystalline. Titanium carbide films created in this study are thermally robust and resistant to sintering, retaining greater than 70% of their initial surface area after annealing to 1000 K. The ability to deposit TiC near room temperature should allow these films to be deposited onto a wide variety of substrates.