Direct Measurement of the Fermi Energy in Graphene Using a Double-Layer Heterostructure

Kim, Seyoung; Jo, Insun; Dillen, David C.; Ferrer, Domingo; Fallahazad, Babak; Yao, Zhen; Banerjee, Sanjay K.; Tutuc, Emanuel

doi:10.1103/physrevlett.108.116404

Cited by 90 publications

(97 citation statements)

References 22 publications

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“…The device layout allows us to independently probe the bottom and top layer resistivites (ρ B , ρ T ), and carrier densities (n B , n T ) in the overlap (tunneling) region as a function of the back-gate (V BG ) and interlayer bias (V TL ) applied on the top layer; the bottom layer potential is kept at ground during all measurements. At a given set of V BG and V TL , the values of n B and n T can be calculated using the following equations [22]:…”

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confidence: 99%

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

et al. 2014

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Abstract:We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

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confidence: 99%

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

et al. 2014

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“…Substantial efforts have been directed towards the investigation of the linear response of doped graphene 24 and of the charge density excitations [25][26][27][28][29] and of such complex quasiparticles as plasmarons 30,31 and plasmon-phonon complexes 32 . Recently, the experimental realization of graphene double-layer structures coupled only via the Coulomb interaction [33][34][35][36][37][38] has attracted substantial theoretical interest in studying the double-layer plasmon effects [39][40][41][42] and the frictional drag 43 in two spatially separated graphene layers [44][45][46][47][48][49][50][51][52] as powerful tools for probing interaction effects of massless Dirac fermions.…”

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confidence: 99%

Plasmonic excitations in Coulomb-coupledN-layer graphene structures

2013

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We study Dirac plasmons and their damping in spatially separated N -layer graphene structures at finite doping and temperatures. The plasmon spectrum consists of one optical excitation with a square-root dispersion and N − 1 acoustical excitations with linear dispersions, which are undamped at zero temperature within a triangular energy region outside the electron-hole continuum. For any finite number of graphene layers we have found that the energy and weight of the optical plasmon increase in the long wavelength limit, respectively, as square-root and linear functions of N . This is in agreement with recent experimental findings. With an increase of the number of multilayer acoustical plasmon modes, the energy and weight of the upper lying branches also exhibit an enhancement with N . This increase is strongest for the uppermost acoustical mode so that its energy can exceed at some value of momentum the plasmon energy in an individual graphene sheet. Meanwhile, the energy of the low lying acoustical branches decreases weakly with N as compared with the single acoustical mode in double-layer graphene structures. Our numerical calculations provide a detailed understanding of the overall behavior of the wave vector dependence of the optical and acoustical multilayer plasmon modes and show how their dispersion and damping are modified as a function of temperature, interlayer spacing, and inlayer carrier density in (un)balanced graphene multilayer structures.

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“…For example, this strategy allows gapless graphene to be used in field-effect tunneling devices in combination with other layered materials (4,5). Vertical 2D heterostructures have also been used to create high-performance Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) (6), tunneling field-effect transistors (FETs) (4), barristors (7), inverters (8), and memory devices (9,10), in addition to facilitating the study of novel physical phenomena in layered materials (11)(12)(13)(14). Similarly, in-plane graphene heterostructures and controlled doping have served as the basis for unique 2D devices (15)(16)(17)(18).…”

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confidence: 99%

Gate-tunable carbon nanotube–MoS ₂ heterojunction p-n diode

Jariwala

Sangwan

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

374

343

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The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance fieldeffect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10 4 . This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, highperformance electronics and optoelectronics.2D transition metal dichalcogenide | single layer MoS 2 | van der Waals heterostructure | rectifier | photodetector

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Direct Measurement of the Fermi Energy in Graphene Using a Double-Layer Heterostructure

Cited by 90 publications

References 22 publications

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

Plasmonic excitations in Coulomb-coupledN-layer graphene structures

Gate-tunable carbon nanotube–MoS ₂ heterojunction p-n diode

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Direct Measurement of the Fermi Energy in Graphene Using a Double-Layer Heterostructure

Cited by 90 publications

References 22 publications

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

Plasmonic excitations in Coulomb-coupledN-layer graphene structures

Gate-tunable carbon nanotube–MoS 2 heterojunction p-n diode

Contact Info

Product

Resources

About

Gate-tunable carbon nanotube–MoS ₂ heterojunction p-n diode