Generally the main component of fishy flavor is considered to be trimethylamine. On the other hand, carbonyl compounds, produced from oxidation of polyunsaturated fatty acid by lipoxygenase or by autoxidation, might have some contribution to the fishy flavor. Since sardine skin contains high levels of polyunsaturated fatty acids and lipoxygenase, carbonyl compounds may be generated more easily than trimethylamine. In this study, volatile flavor compounds of sardine were analyzed by gas chromatograph-mass spectrometry and gas chromatograph-olfactometry combined with solid phase microextraction. Then, the flavor components that contribute to fishy flavor were identified. At normal pH (6.2), trimethylamine was not detected or sensed from the fresh sardines. When the pH was raised, the amount of trimethylamine became higher. Trimethylamine flavor was weak at pH 9 and strongly sensed at pH 11 or higher. On the other hand, 33 other compounds were positively or tentatively identified, including 8 hydrocarbons, 5 ketones, 1 furan, 1 sulfur compound, 12 aldehydes, and 6 alcohols in fresh sardines. Among them, 2,3-pentanedione, hexanal, and 1-penten-3-ol were the main components. Forty-seven flavors were detected by gas chromatograph-olfactometry. Among them, paint-like (1-penten-3-one), caramel-like (2,3-pentanedione), green-like (hexanal), shore-like ((Z)-4-heptenal), citrus note (octanal), mushroom-like (1-octen-3-one), potato-like (methional), insect-like ((E,Z)-2,6-nonadienal), and bloody note (not identified) were strongly sensed. From the aforementioned results, it can be concluded that these compounds rather than trimethylamine contributed to fresh sardine flavor.
The basic rules of self-organization using a totalistic cellular automaton (CA) were investigated, for which the cell state was determined by summing the states of neighboring cells, like in Conway’s Game of Life. This study used a short-range and long-range summation of the cell states around the focal cell. These resemble reaction-diffusion (RD) equations, in which self-organizing behavior emerges from interactions between an activating factor and an inhibiting factor. In addition, Game-of-Life-type rules, in which a cell cannot survive when adjoined by too many or too few living cells, were applied. Our model was able to mimic patterns characteristic of biological cells, including movement, growth, and reproduction. This result suggests the possibility of controlling self-organized patterns. Our model can also be applied to the control of engineering systems, such as multirobot swarms and self-assembling microrobots.
Integration schemes of bulk FinFET SRAM cell with bulk planar FET peripheral circuit are studied for the first time. Two types of SRAM cells with different β-ratio were fabricated and investigated in the view of static noise margin (SNM). High SNM of 122 mV is obtained in the cell with 15 nm Fin width, 90 nm channel height and 20 nm gate length at V dd = 0.6 V. This is the smallest gate length FinFET SRAM reported to date.A higher beta ratio (β > 2.0) in FinFET SRAM cell will be also achieved by tuning the effective channel width of each FinFETs without area penalty by taking advantage of bulk-Si substrate.
World's first monolithically integrated Thin-Film-Transistor (TFT) SRAM configuration circuits over 90nm 9 layers of Cu interconnect CMOS is successfully fabricated at 300mm LSI mass production line for 3-dimensional Field Programmable Gate Arrays (3D-FPGA). This novel technology built over the 9 th layer of Cu metal features aggressively scaled amorphous Si TFT having 180nm transistor gate length, 20nm gate oxide, fully silicided gate, S/D, all below 400C processing essential to not impact underlying Cu interconnects. Low temperature TFT devices show excellent NTFT/PTFT transistor I on /I off ratios over 2000/100 respectively, operate at 3.3V, E-field scalable, and are stable for SRAM configuration circuits. We believe this 3D-TFT technology is a major breakthrough innovation to overcome the conventional CMOS device shrinking limitation.Introduction Downscaling of conventional CMOS device has reached its limitations and cost to develop sub 40 nm processes has dramatically increased. To overcome the CMOS shrinking limitation, various technologies such as high-k, metal gate, stress liner, and e-SiGe etc. are applied [1] or many new concept devices are reported [2][3][4].We propose a new concept for a novel 3D-FPGA using a-Si TFT configuration SRAM ( Fig. 1) over bulk CMOS logic to reduce FPGA die area, die cost and power [5]. 3D-FPGA is for prototype & low volume production. For high volume production, the TFT layer is replaced with metal layer (Fig. 2) during fabrication, which means FPGA die converts to timing-exact ASIC die without redesign effort, lowering die cost further and improving reliability. In this paper, we present the TFT fabrication technology & TFT device characteristics built over 9 layers of Cu interconnected CMOS circuits at processing temperature below 400C.Process technology Process flow for the TFT device on LSI is shown in Fig. 3. First, underlying LSI was fabricated on 300mm-Si Toshiba standard 90nm CMOS technology. After opening via's to connect the LSI to TFT, a-Si TFT' were fabricated below 400C, which is essential to maintain the reliability of Cu metal. This constraint limits the performance of TFT devices. Fig. 4 shows a cross sectional image of 9 metal layer CMOS with TFT layer (left Fig.) and a detailed TFT transistor (right Fig.). TFT transistor channel length is 180nm, with 20nm gate dielectric formed by plasma-TEOS. Fully silicided a-Si gate electrode (FUSI gate) is formed to control the Vth and boost the transistor performance. S/D is also fully silicided for higher current and to connect to underlying CMOS. NiPt and a-Si thickness is accurately controlled to form FUSI gate and S/D. TFT transistor image is shown in Fig. 5. TFT transistor performance is enhanced by using majority carrier accumulation devices. Table-1 shows the key features for this a-Si TFT technology demonstrating the densest integration for a-Si TFT in the industry. Key features of TFT processing used Toshiba 65nm CMOS fabrication techniques.Device characterization Fig. 6 (a) shows TFT transistor characteristi...
Although numerous reports using methods such as molecular dynamics, cellular automata, and artificial chemistry have clarified the process connecting non-life and life on protocell simulations, none of the models could simultaneously explain the emergence of cell shape, continuous self-replication, and replication control solely from molecular reactions and diffusion. Herein, we developed a model to generate all three conditions, except evolution ability, from hypothetical chains of chemical and molecular polymerization reactions. The present model considers a 2D lattice cell space, where virtual molecules are placed in each cell, and molecular reactions in each cell are based on a multiset rewriting rule, indicating stochastic transition of molecular species. The reaction paths of virtual molecules were implemented by replacing the rules of cellular automata that generate Turing patterns with molecular reactions. The emergence of a cell-like form with all three conditions except evolution ability was modeled and demonstrated using only molecular diffusion, reaction, and polymerization for modeling the chemical reactions of 15 types of molecules and 2 types of polymerized molecules. Furthermore, controlling self-replication is possible by changing the initial arrangement of a specific molecule. In summary, the present model is capable of investigating and refining existing hypotheses on the emergence of life.
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