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It has been commonly thought that diamond is unique in its class in that it can undergo p‐type transfer doping when covered by a thin layer of electrolyte. In this study, density‐functional theory has been used to show that the work functions of graphite and graphene are low enough for transfer doping to occur between a graphite or graphene substrate and an aqueous adsorbate layer. The possible electrochemical reactions are the same as those favoured in the case of diamond, e.g. O2 + 2H2O + 4e– → 4OH– where the electrons have been provided by the graphite or graphene substrate. Notably, the extraordinary nature of carrier transport in (single‐layer) graphene renders this non‐disruptive doping method an exciting possibility. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The utility of diamond as an electronic material is compromised by the lack of a suitable shallow donor. Here, ab initio theory is used to investigate the donor levels of substitutional pnictogen (N, P, As, and Sb) and chalcogen (S, Se, and Te) impurities and chalcogen-hydrogen defects in diamond. Substitutional S is found to be a deep donor, while As and Sb possess donor levels significantly shallower than P, which so far is the most effective shallow donor found by experiment.