Donor and acceptor states in diamond

Goss, Jonathan P.; Briddon, P.R.; Jones, R.; Sque, S. J.

doi:10.1016/j.diamond.2003.08.028

Cited by 143 publications

(102 citation statements)

References 38 publications

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“…Diamond surfaces terminated by hydrogen and subsequent interactions of the hydrogenated diamond surfaces with ambient environment resulting in the p-type surface conductivity have been intensively studied in the past [1][2][3][4][5][6]. Maier et al [7] gave the first experimental evidence that chemisorbed hydrogen is a necessary but not a sufficient prerequisite for such surface conductivity and that the electron acceptors are provided by atmospheric adsorbates, leading to the so called "transfer surface doping" model.…”

Section: Introductionmentioning

confidence: 99%

The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond

Deferme¹,

Tanasa²,

Amir³

et al. 2006

Diamond and Related Materials

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In this work, scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) were applied to investigate the surface morphology and the surface electronic structure of plasma-treated (100)-oriented CVD diamond films. These films were hydrogenated using a conventional MWPE-CVD (microwave plasma enhanced chemical vapour deposition) reactor containing a H2 or a H2/O2 mixture. A comparison is made between (100)-oriented CVD diamond films hydrogenated with and without a small addition of oxygen (1%). X-ray Photoelectron Spectroscopy (XPS) and UV Photoelectron Spectroscopy (UPS) measurements point to the presence of O-atoms at the (sub)-surface of the diamond film. The measured conductivity is significantly different for the two processes of hydrogenation. Annealing experiments point out that the samples, which were terminated using the H2/O2 mixture are still conductive enough after annealing at 410 °C to enable STM experiments. Here, we discuss the mechanism for STM imaging of H2/O2 treated diamond films, associated with surface states induced by the oxygen incorporation.

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Section: Introductionmentioning

confidence: 99%

The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond

Deferme¹,

Tanasa²,

Amir³

et al. 2006

Diamond and Related Materials

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“…When using AsH 3 gas, or evaporated Sb(Ph) 3 or Sb, it was noticed that after several deposition runs the chamber walls became coated in a shiny-grey layer of either pure As or Sb. This coating did not appear on the substrate holder or within an area ~2 cm diameter from the filament, but was confined to the cooler parts of the chamber.…”

Section: Resultsmentioning

confidence: 99%

“…However, this gas is very difficult to obtain commercially, and is unstable. Therefore, Sb was introduced as either triphenylantimony (Sb(Ph) 3 ) powder or as lumps of solid Sb, which were placed into an independently-controlled heater within the chamber (see Fig.1). This allowed the material to vaporise at a controlled, steady rate throughout the deposition run.…”

Section: Methodsmentioning

confidence: 99%

“…The story is the same for antimony, whether it was vaporised from lumps of Sb or from Sb(Ph) 3 powder. The Raman spectra, film morphology, growth rate, electrical resistivity of the films for all experiments with different Sb concentrations were identical to those of films grown without Sb addition.…”

Section: Sb Additionmentioning

confidence: 99%

“…Previous attempts to make n-type diamond by doping with elements such as N, S or P have either been unsuccessful, or have produced films with electrical characteristics that are not adequate for many proposed devices [1]. However, recent theoretical studies [2,3] have shown that if arsenic or antimony were to be incorporated substitutionally into a diamond lattice, they may act as useful n-type dopants. In particular, these studies predict that substitutional As and Sb should possess significantly shallower donor levels in diamond than substitutional phosphorus, being ~0.4 eV and 0.3 eV below the conduction band minimum, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Arsenic and Antimony Doping: An Attempt to Deposit n-type CVD Diamond

et al. 2007

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We report the results of experiments that attempt to deposit n-type CVD diamond in a standard hot filament reactor using 1%CH 4 /H 2 gas mixtures, using (i) AsH 3 as a gas phase source of arsenic, and (ii) evaporated Sb or Sb(Ph) 3 as a source of antimony. SIMS measurements revealed that under these conditions, neither Sb nor As is incorporated into the diamond film, and the Raman spectra, electrical conductivity and crystallite morphology remain unchanged from that of undoped diamond. These experiments confirm the predicted low incorporation efficiency for As and Sb, and we conclude that doping CVD diamond with these elements cannot readily be achieved in this manner.

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Types of Conducting Diamond Materials and their Properties

Quiróz

Bandala

2011

Synthetic Diamond Films

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Donor and acceptor states in diamond

Cited by 143 publications

References 38 publications

The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond

The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond

Arsenic and Antimony Doping: An Attempt to Deposit n-type CVD Diamond

Types of Conducting Diamond Materials and their Properties

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