Vacancy-impurity complexes and limitations for implantation doping of diamond

Goss, J. P.; Briddon, P.R.; Rayson, Mark; Sque, S. J.; Jones, R.

doi:10.1103/physrevb.72.035214

Cited by 145 publications

(99 citation statements)

References 63 publications

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“…In 2005 Goss et al modeled a large range of impurity systems, where they showed a large number of dopants (X) may capture vacancies to produce dopant-vacancy such as NV centers [34]. On the calculation of the binding energies of the dopant-vacancy (XV) complexes some important conditions have been identified using the following reaction.…”

Section: Energetics To Produce Nv Centersmentioning

confidence: 99%

An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation

Haque

Sumaiya

2017

JMMP

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Nitrogen-vacancy (NV) in diamond possesses unique properties for the realization of novel quantum devices. Among the possibilities in the solid state, a NV defect center in diamond stands out for its robustness-its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. In this paper, we illustrated the formation kinetics of NV centers in diamond and their transformation from one charge state to another. The controlled scaling of diamond NV center-based quantum registers relies on the ability to position NV defect centers with high spatial resolution. Ion irradiation technique is widely used to control the spatial distribution of NV defect centers in diamond. This is addressed in terms of energetics and kinetics in this paper. We also highlighted important factors, such as ion struggling, ion channeling, and surface charging, etc. These factors should be considered while implanting energetic nitrogen ions on diamond. Based on observations of the microscopic structure after implantation, we further discussed post-annealing treatment to heal the damage produced during the ion irradiation process. This article shows that the ion implantation technique can be used more efficiently for controlled and efficient generation of NV color centers in diamond, which will open up new possibilities in the field of novel electronics and computational engineering, including the art of quantum cryptography, data science, and spintronics.

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Section: Energetics To Produce Nv Centersmentioning

confidence: 99%

An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation

Haque

Sumaiya

2017

JMMP

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“…As discussed below, there are several possible acceptor species. For the present discussion we label the acceptor as A − , and choose an energy level 1.4 eV above the valence band maximum as expected either for substitutional Ga impurities 51 or for graphitic defects 52 . The indirect bandgap of diamond is E g = E c − E v = 5.5 eV.…”

Section: Simple Depletion Modelmentioning

confidence: 99%

“…However, the sheet density of acceptors needed to produce a depletion layer in our model is only 7% of the implanted Ga + dose. Acceptor levels for substitutional Ga impurities and for Gavacancy complexes have recently been calculated, with positions 1.4 eV and 1.7 eV above the valence band max-imum, respectively 51 .…”

Section: Density Of Nvmentioning

confidence: 99%

Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing

et al. 2009

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Etching experiments were performed that reveal the vertical distribution of optically active nitrogen-vacancy (NV) centers in diamond created in close proximity to a surface through ion implantation and annealing. The NV distribution depends strongly on the native nitrogen concentration, and spectral measurements of the neutral and negatively-charged NV peaks give evidence for electron depletion effects in lower-nitrogen material. The results are important for potential quantum information and magnetometer devices where NV centers must be created in close proximity to a surface for coupling to optical structures.

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“…Because a neutral oxygen-vacancy (O-V) center composing of a substitutional oxygen atom at the carbon site and an adjacent carbon vacancy in diamond is structurally analogous to and isoelectronic with the NV À1 center, it is natural to consider the diamond O-V center as a plausible qubit candidate. As a matter of fact, the oxygen impurities play an important role in diamond growth 12 and the oxygen-related defects in diamond have been studied both theoretically 13,14 and experimentally. 12,[15][16][17] In this work, we presented comprehensive theoretical studies for the spin-polarized defect energy levels, formation energies, configuration-coordinate diagrams, and spin coherence times of the O-V centers in diamond.…”

mentioning

confidence: 99%

A neutral oxygen-vacancy center in diamond: A plausible qubit candidate and its spintronic and electronic properties

Zhang

Tang

Zhao

et al. 2014

Applied Physics Letters

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Spintronic and electronic properties of a neutral oxygen-vacancy (O-V) center, an isoelectronic defect similar to the negatively charged nitrogen-vacancy center in diamond, were studied by combining first-principles calculations and a mean-field theory for spin hyperfine interaction. It is elucidated that the neutral O-V center is stable in the p-type diamond and possesses an S = 1 triplet ground state and four spin-conserved excited states with the spin coherence times in an order of second at T = 0 K. The results indicate that the neutral O-V center is another promising candidate for spin coherent manipulation and qubit operation.

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Vacancy-impurity complexes and limitations for implantation doping of diamond

Cited by 145 publications

References 63 publications

An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation

An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation

Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing

A neutral oxygen-vacancy center in diamond: A plausible qubit candidate and its spintronic and electronic properties

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