The transfer doping of graphite and graphene

Sque, S. J.; Jones, R.; Briddon, P.R.

doi:10.1002/pssa.200776313

Cited by 96 publications

(80 citation statements)

References 32 publications

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“…49 Sque et al specifically suggested that graphene could undergo transfer doping to the aqueous oxygen redox couple. 50 Similar effects have been observed with multi-walled nanotubes. 51 Water films can occur on graphite, [52][53][54][55] diamond, 56,57 carbon nanotubes, 58 and graphene.…”

Section: Discussionsupporting

confidence: 65%

Electrochemically Induced p-Type Conductivity in Carbon Nanotubes

Chakrapani

Суманасекера

Abeyweera

et al. 2013

ECS Solid State Letters

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Vacuum-annealed semiconducting single walled nanotubes are n-type, but become p-type when exposed to ambient air. Here we present evidence that this effect arises from pinning of the Fermi energy by the four-electron oxygen redox couple in an adsorbed water film, a type of surface transfer doping. The pronounced electrical sensitivity to O 2 , O 3 , NO 2 , SO 2 , NH 3 and HNO 3 vapors results from electron exchange between the redox couple and the nanotube. This effect must be considered when using nanotubes for any application in humid air. We also suggest that changes in the electrical properties of graphene and multi-walled nanotubes can be explained by this phenomenon.

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Section: Discussionsupporting

confidence: 65%

Electrochemically Induced p-Type Conductivity in Carbon Nanotubes

Chakrapani

Суманасекера

Abeyweera

et al. 2013

ECS Solid State Letters

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“…The U G values reported in Table I (4.64-4.95 eV) are higher than theoretical values for ideal graphene, and higher also than values obtained from measurements performed in UHV. This can be ascribed to p-type doping from the lab environment, since both H 2 O and O 2 act as electron acceptors, 22,23 lowering E F and thus, increasing U G . Large changes ($200 meV) in the work function were observed from day to day due to chemical doping from adsorbents varying in the lab ambient.…”

Section: -mentioning

confidence: 99%

The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC

Eriksson

Pearce

Iakimov

et al. 2012

Applied Physics Letters

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A pivotal issue for the fabrication of electronic devices on epitaxial graphene on SiC is controlling the number of layers and reducing localized thickness inhomogeneities. Of equal importance is to understand what governs the unintentional doping of the graphene from the substrate. The influence of substrate surface topography on these two issues was studied by work function measurements and local surface potential mapping. The carrier concentration and the uniformity of epitaxial graphene samples grown under identical conditions and on substrates of nominally identical orientation were both found to depend strongly on the terrace width of the SiC substrate after growth.

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“…The notion of water behaving as electron acceptor when adsorbed on graphene is in accordance with recent theoretical studies. [27] An alternative mechanism that also appears plausible involves water adsorption on the residual oxygen containing groups that reduces the p-type doping. [28] However, our observations suggest that such a mechanism only plays a minor role, most likely due to the high concentration of water used here.…”

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confidence: 99%