Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes

Sque, S. J.; Jones, R.; Goss, Jonathan P.; Briddon, P.R.

doi:10.1103/physrevlett.92.017402

Cited by 82 publications

(59 citation statements)

References 42 publications

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“…Other dopants have also been tried, such as sulphur and arsenic [90], however no systematic results have been obtained so far. A complex involving boron and hydrogen complex has recently been proposed as a shallow dopant for n-type diamond [91] but the long-term stability of the complex is still not known.…”

Section: Diamond Dopingmentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

248

156

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This paper reviews the growth of diamond by chemical vapour deposition (CVD). It includes the following seven parts: (1) Properties of diamond: this part briefly introduces the unique properties of diamond and their origin and lists some of the most common diamond applications. (2) Growth of diamond by CVD: this part reviews the history and the methods of growing CVD diamond. (3) Mechanisms of CVD diamond growth: this part discusses the current understanding on the growth of metastable diamond from the vapour phase. (4) Characterization of CVD diamond: we discuss the two most common techniques, Raman and XRD, which have been intensively employed for characterizing CVD diamond. (5) CVD diamond growth characteristics: this part demonstrates the characteristics of diamond nucleation and growth on various types of substrate materials. (6) Nanocrystalline diamond: in this section, we present an introduction to the growth mechanisms of nanocrystalline diamond and discuss their Raman features. This paper provides necessary information for those who are starting to work in the field of CVD diamond, as well as for those who need a relatively complete picture of the growth of CVD diamond.

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Section: Diamond Dopingmentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

248

156

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show abstract

“…The substrate had an area of 1×1 cm 2 and made from an intrinsic (undoped) single crystal (100) Si wafer. Prior to deposition the substrates were manually abraded with 1-3 µm diamond grit, and then cleaned with propan-2-ol.…”

Section: Methodsmentioning

confidence: 99%

“…Previous attempts to make n-type diamond by doping with elements such as N, S or P have either been unsuccessful, or have produced films with electrical characteristics that are not adequate for many proposed devices [1]. However, recent theoretical studies [2,3] have shown that if arsenic or antimony were to be incorporated substitutionally into a diamond lattice, they may act as useful n-type dopants. In particular, these studies predict that substitutional As and Sb should possess significantly shallower donor levels in diamond than substitutional phosphorus, being ~0.4 eV and 0.3 eV below the conduction band minimum, respectively.…”

Section: Introductionmentioning

confidence: 99%

Arsenic and Antimony Doping: An Attempt to Deposit n-type CVD Diamond

et al. 2007

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We report the results of experiments that attempt to deposit n-type CVD diamond in a standard hot filament reactor using 1%CH 4 /H 2 gas mixtures, using (i) AsH 3 as a gas phase source of arsenic, and (ii) evaporated Sb or Sb(Ph) 3 as a source of antimony. SIMS measurements revealed that under these conditions, neither Sb nor As is incorporated into the diamond film, and the Raman spectra, electrical conductivity and crystallite morphology remain unchanged from that of undoped diamond. These experiments confirm the predicted low incorporation efficiency for As and Sb, and we conclude that doping CVD diamond with these elements cannot readily be achieved in this manner.

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“…Silicon is the archetypal semiconductor, whereas diamond can be an ideal material for many electronic applications as it has a wide band gap, high carrier mobility, thermal conductivity, and low dielectric constant. [11][12][13] The aim is to compare these two isostructural materials since they have significantly different electronegativities.…”

mentioning

confidence: 99%

Electronegativity and doping in semiconductors

Schwingenschlögl

Chroneos

Schuster

et al. 2012

Journal of Applied Physics

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Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

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Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes

Cited by 82 publications

References 42 publications

Diamond growth by chemical vapour deposition

Diamond growth by chemical vapour deposition

Arsenic and Antimony Doping: An Attempt to Deposit n-type CVD Diamond

Electronegativity and doping in semiconductors

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