The effects of accumulated radiation damage which arise from the excessive current density
employed during focused ion beam implantation are described. The dwell time during beam
scanning significantly influences the focused ion beam synthesis of CoSi2 in Si. At
sufficiently low accumulated damage, single-crystalline CoSi2 layers are obtained, similarly
to conventional ion implantation. A procedure is described which enables the reduction of
radiation damage induced by a focused ion beam to the level of conventional ion
implantation. This is of importance for the formation of
single-crystalline CoSi2 layers.
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