Fabrication of MSM detector structures on silicon by focused ion beam implantation

Teichert, J.; Bischoff, L.; Hausmann, S.

doi:10.1016/s0167-9317(96)00186-4

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…12) Furthermore, HEMTs with interdigitated electrodes are preferable since it satisfies both the requirements of a sensor, that is, large area and reduced electrode dimensions. 27) In addition, catalytic dissociation of NO 2 on Pt functionalization layer leads to the increase of the adsorption and dissociation rates.…”

Section: Resultsmentioning

confidence: 99%

AlGaN/GaN HEMT-based high-sensitive NO₂ gas sensors

Ranjan

Agrawal

Radhakrishnan

et al. 2019

Jpn. J. Appl. Phys.

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We report on a Pt/AlGaN/GaN HEMT-based gas sensor with interdigitated electrodes for NO 2 sensing over the temperature range of 30 °C-300 °C. The sensors show a change in current (ΔI) of 0.5 mA with sensitivity of 1.2% for 10 ppm NO 2 at 30 °C and recovers at elevated temperature. The sensitivity increases with the increase in relative humidity (0 to 90%) at 30 °C. High sensitivity of 5.5% with a corresponding ΔI of 1.8 mA is achieved for 10 ppm NO 2 concentration at 300 °C, which is higher than the reported value under similar measurement conditions. The large surface area of the interdigitated electrodes and the catalytic property of the platinum functionalization layer enables high sensitivity for low NO 2 concentrations of <10 ppm.

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Section: Resultsmentioning

confidence: 99%

AlGaN/GaN HEMT-based high-sensitive NO₂ gas sensors

Ranjan

Agrawal

Radhakrishnan

et al. 2019

Jpn. J. Appl. Phys.

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“…Thus, HEMTs with interdigitated electrodes are preferable since it satisfies both the requirements of a sensor, that is large area and reduced electrode dimensions. 27 The large surface area of the interdigitated electrodes enables more interaction between the adsorbed gaseous ions and the sensor surface. Hence, the higher sensing response and lower detection limit were obtained by Pt/AlGaN/GaN HEMT with multigate electrodes as compared to the single gate sensors of the same layer structure.…”

Section: Resultsmentioning

confidence: 99%

Enhanced NO₂ Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors

Ranjan

Lingaparthi

Dharmarasu

et al. 2021

J. Electrochem. Soc.

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We report on Pt/AlGaN/GaN high electron mobility transistor (HEMT) based gas sensor with interdigitated electrodes for NO2 sensing in the temperature range of 30 °C–300 °C. The effect of the length of platinum functionalization layer (gate length), gas detection limit and the activation energies were investigated in this work. It was found that the sensor with the shortest gate length exhibited the lowest sensing response, but highest responsivity and vice versa. The sensing response of 1.2% with the corresponding ΔI of 400 μA was obtained for 50 ppb of NO2 concentration, which is the lowest NO2 concentration reported for Pt/AlGaN/GaN HEMT based sensors. Both the efficient sensing mechanism of the interdigitated electrodes and the catalytic property of platinum functionalization layer enable higher sensing response and lower detection limit for NO2. Activation energies of 0.33 eV/ion and 0.64 eV/ion for adsorption and desorption of O− ions, respectively have been determined in these sensors.

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“…Additionally, the I-V characteristics of one of the Schottky diodes of this structure is presented Ref. [35].…”

Section: Writing Cosi 2 Synthesismentioning

confidence: 99%

Fabrication of MSM detector structures on silicon by focused ion beam implantation

Cited by 6 publications

References 12 publications

AlGaN/GaN HEMT-based high-sensitive NO₂ gas sensors

AlGaN/GaN HEMT-based high-sensitive NO₂ gas sensors

Enhanced NO₂ Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors

Alloy liquid metal ion sources and their application in mass separated focused ion beams

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Fabrication of MSM detector structures on silicon by focused ion beam implantation

Cited by 6 publications

References 12 publications

AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors

AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors

Enhanced NO2 Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors

Alloy liquid metal ion sources and their application in mass separated focused ion beams

Contact Info

Product

Resources

About

AlGaN/GaN HEMT-based high-sensitive NO₂ gas sensors

AlGaN/GaN HEMT-based high-sensitive NO₂ gas sensors

Enhanced NO₂ Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors