Single-Crystalline CoSi₂ Layer Formation by Focused Ion Beam Synthesis

Abstract

The effects of accumulated radiation damage which arise from the excessive current density employed during focused ion beam implantation are described. The dwell time during beam scanning significantly influences the focused ion beam synthesis of CoSi2 in Si. At sufficiently low accumulated damage, single-crystalline CoSi2 layers are obtained, similarly to conventional ion implantation. A procedure is described which enables the reduction of radiation damage induced by a focused ion beam to the level of conventional ion implantation. This is of importance for the formation of single-crystalline CoSi2 layers.

High-fluence Si-implanted diamond: Formation of SiC nanocrystals and sheet resistance

“…It is well known that the flux of implanted ions also may play a crucial role in phase formation. 22,23 For this reason, the dose rate ͑6 A cm Ϫ2 ͒ is kept constant for all implantation runs. According to TRIM 24 simulations, depicted in Fig.…”

Nanostructures by Mass-Separated FIB

“…First attempts to apply FIB to nanowire synthesis are described elsewhere [104][105][106]. In contrast to usually applied Ga LMIS, alloy based LMIS [107] provide different ion species, i.e., Au + , Ge + , Si + , for metallic and semiconducting nanowire synthesis in insulting materials, for example, in SiO 2 , and, i.e., Co + , Ni + , Pr + , for synthesis of silicide nanowires in Si.…”

Application of mass-separated focused ion beams in nano-technology

“…A couple of years ago this process was transferred to the writing FIB technology to obtain smaller structure dimensions [34]. Therefore a Co 36 Nd 64 alloy LMIS was developed [35] and low resistivity, single-crystalline CoSi 2 -microstructures were successfully fabricated down to dimensions as small as 60 nm [36]. The application of the high resolution FIB admitting a Co 2+ beam (60 keV) with a spot size <50 nm opened the possibility to fabricate nanowires (NW) with a width down to 20 nm [37].…”