For implanted phosphorus in the dose range of 5×1013/cm2–4×1014/cm2, up to half the implanted dose may be lost during low thermal budget anneals due to transient diffusion and anomalous segregation at the Si–SiO2 interface. The phosphorus atoms, rendered mobile by the implant damage, stick in the oxide near the interface where they are electrically inactive and can be removed by stripping the surface oxide. Such a dose loss needs to be accounted for in a typical device fabrication process.
During the past few years, enterprises have been increasingly aggressive in moving mission-critical and performance-sensitive applications to the cloud, while at the same time many new mobile, social, and analytics applications are directly developed and operated on cloud computing platforms. These two movements are encouraging the shift of the value proposition of cloud computing from cost reduction to simultaneous agility and optimization. These requirements (agility and optimization) are driving the recent disruptive trend of software defined computing, for which the entire computing infrastructureVcompute, storage and networkVis becoming software defined and dynamically programmable. The key elements within software defined environments include capability-based resource abstraction, goal-based and policy-based workload definition, and outcome-based continuous mapping of the workload to the available resources. Furthermore, software defined environments provide the tooling and capabilities to compose workloads from existing components that are then continuously and autonomously mapped onto the underlying programmable infrastructure. These elements enable software defined environments to achieve agility, efficiency, and continuous outcome-optimized provisioning and management, plus continuous assurance for resiliency and security. This paper provides an overview and introduction to the key elements and challenges of software defined environments. focuses on identifying better outcomes within a cloud environment with respect to the value of the service, the cost of the required resources, and the risk of failure in an unpredictable environment and under constant usage changes. This requires a high degree of automation and programmability of the infrastructure itself. Hence, this shift led to the recent disruptive trend of software defined computing for which the entire system infrastructureVcompute, storage and networkVis becoming software defined and dynamically programmable. Software defined computing receives considerable focus across academia and enterprises [1-7]. Software defined computing originated from the compute environment in which the computing resources are virtualized and managed as virtual machines [8-11]. This enabled mobility and higher resource utilization as several virtual machines are collocated on the same server,
We demonstrate a 0.08 pm CMOS suitable for highperformance (vdd=1.8 V) and low-power applications (vdd < 1.5 V) with the best current drive at a given off-current reported in the literature to date. Excellent short-channel effects were obtained for Leff down to 0.06 pm in the NFET and 0.08 pm in the PFET. Aggressive lateral and vertical dopant engineering allow the V, to be reduced with no degradation in short-channel effects resulting in a 50% improvement in delay at Vd,=l V over the regular-VT process. INTRODUCTION AND DESIGN CRITERIADevice channel lengths are continually scaled to improve circuit performance and packing density. In addition to performance, the emergence of battery-powered applications have emphasized the need for good low-voltage operation. The primary goal for a high-performance sub-0.1 pm device design is to achieve the highest current drive for a given amount of short-channel effect or off-current. At reduced supply voltages, the threshold voltage must also be scaled to maintain adequate performance [l]. To maximize the functionality of a technology, the device design should be suitable for both high-performance and low-power applications with minor modifications. A major challenge is to maintain good short-channel effects in the low-v, case. To achieve these design goals, the following features are used: 1) super-steep retrograde channel; 2) different V,' s for highperformance and low-voltage applications by altering the channel dose; 3) 3.5 nm N 2 0 gate dielectric to improve performance and prevent boron penetration in the PFET; and (4) aggressive lateral dopant engineering to achieve good short-channel effects even at low V,'S.
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