A novel compositional accommodation mechanism in perovskite (ABO 3 ) SrNbO 3 thin films was revealed by field-emission analytical electron microscopy (AEM). A new analytical methodology for estimating localized structures such as planar faults is also presented. The method was applied for investigating the compositional accommodation mechanism of B-ion-rich SrNbO 3 epitaxial thin films. Two types of accommodation mechanism -formation of B-ion-rich amorphous phase and (110)-located high-density planar defects -were revealed. The latter mechanism is a new finding for B-ion-rich perovskites.

Sr(Ti 1−x ,Ru x )O 3 (STRO) epitaxial thin films were deposited on single-crystal SrTiO 3 (100) substrates using the inductivecoupling-plasma-induced RF magnetron sputtering method without oxygen. The electrical conductivity of STRO films increases with Ru concentration and levels of the Ru 4d states are observed in the band gap of SrTiO 3 by X-ray photoelectron spectroscopy (XPS) analysis. These results are consistent with those obtained by first-principles calculations. Thermodynamic stability increases with the decrease of Ru concentration, and STRO (x < 0.50) is free from degradation under annealing H 2 atmosphere at 600 • C. This high resistance against reductive processes indicates that STRO (x < 0.50) is one of the most suitable candidates for conductive oxide electrodes of oxide capacitors.

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