Ferroelectric properties of epitaxial barium titanate thin film capacitors on silicon substrate

Abe, Kazuhide; Yanase, Naoko; Yasumoto, Takaaki; Ohara, Ryoichi; Sano, Kenya; Fukushima, Noburu; Kawakubo, Takashi

doi:10.1080/10584580108222310

Cited by 3 publications

(1 citation statement)

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“…This would correspond to a strain of 1 % which adds to the regular spontaneous ferroelastic strain of tetragonal BaTiO 3 . A similar additional strain in amount of 1.6 % was previously observed in BaTiO 3 thin films on SrRuO 3 electrodes due to the BaTiO 3 /SrRuO 3 lattice misfit [22]. The strained c-axis-oriented part, having an increased lattice parameter c and thus probably also an increased polarization value [23], may well contribute to the observed polarization pinning.…”

Section: Impact Of the Film/substrate Interface Onto A Thickness-depesupporting

confidence: 57%

Interfaces in nanosize perovskite titanate ferroelectrics — microstructure and impact on selected properties

Hesse¹,

Alexe²

2005

MEKU

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Interfaces in nanosize perovskite titanate ferroelectrics -microstructure and impact on selected propertiesMisfit dislocations in epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) nanoislands on SrTiO 3 (001) substrates are shown to involve strain fields that distort the PZT lattice in a tube of material with a cross-section of about 4 nm × 8 nm around each misfit dislocation. As a consequence, 10 nm thin nanoislandsaround half of their volume being distorted -are not ferroelectric. This finding corresponds to an impact of the interfacial dislocations on the ferroelectric size effect. Moreover, an interface-related, size-dependent imprint effecti. e., a vertical shift of the ferroelectric hysteresis loopwas observed in polycrystalline PZT and epitaxial BaTiO 3 nanoislands. In result, interfacial engineering is indispensable to obtain nanostructured ferroelectrics with stable polarization and switching properties.

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Section: Impact Of the Film/substrate Interface Onto A Thickness-depesupporting

confidence: 57%