2001
DOI: 10.1080/10584580108222310
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Ferroelectric properties of epitaxial barium titanate thin film capacitors on silicon substrate

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Cited by 3 publications
(1 citation statement)
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“…This would correspond to a strain of 1 % which adds to the regular spontaneous ferroelastic strain of tetragonal BaTiO 3 . A similar additional strain in amount of 1.6 % was previously observed in BaTiO 3 thin films on SrRuO 3 electrodes due to the BaTiO 3 /SrRuO 3 lattice misfit [22]. The strained c-axis-oriented part, having an increased lattice parameter c and thus probably also an increased polarization value [23], may well contribute to the observed polarization pinning.…”
Section: Impact Of the Film/substrate Interface Onto A Thickness-depesupporting
confidence: 57%
“…This would correspond to a strain of 1 % which adds to the regular spontaneous ferroelastic strain of tetragonal BaTiO 3 . A similar additional strain in amount of 1.6 % was previously observed in BaTiO 3 thin films on SrRuO 3 electrodes due to the BaTiO 3 /SrRuO 3 lattice misfit [22]. The strained c-axis-oriented part, having an increased lattice parameter c and thus probably also an increased polarization value [23], may well contribute to the observed polarization pinning.…”
Section: Impact Of the Film/substrate Interface Onto A Thickness-depesupporting
confidence: 57%