2010
DOI: 10.1080/00150193.2010.484334
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Epitaxial Growth and Ferroelectricity of BaTiO3on SrRuO3/TiO2Buffered GaN

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Cited by 4 publications
(4 citation statements)
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“…2b shows the narrow scan spectrum of Ba for the BaTiO 3 thin film. It can be seen from the XPS spectra of Ba 3d that there exists one electron state of Ba 3d 5 in the detectable surface region with a binding energy of 779.6 eV. The Ba 3d 5/2 state corresponds to the α state, which is associated with the pervoskite structure [30,31].…”
Section: X-ray Photoelectron Spectroscopy (Xps)mentioning
confidence: 99%
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“…2b shows the narrow scan spectrum of Ba for the BaTiO 3 thin film. It can be seen from the XPS spectra of Ba 3d that there exists one electron state of Ba 3d 5 in the detectable surface region with a binding energy of 779.6 eV. The Ba 3d 5/2 state corresponds to the α state, which is associated with the pervoskite structure [30,31].…”
Section: X-ray Photoelectron Spectroscopy (Xps)mentioning
confidence: 99%
“…The BaTiO 3 thin films with perovskite structure are of particular interest for electronic device applications due to their useful ferroelectric properties [1][2][3]. Many attempts have been tried to * E-mail: chbhosale@gmail.com integrate the ferroelectric thin films of BaTiO 3 to design non-volatile memory devices and integrated transducers [4,5]. Initially, various research groups have been working on the bulk form of BaTiO 3 but nowadays, due to downsizing and miniaturization of integrated circuits, there are more and more demands imposed on the thin films of BaTiO 3 technological applications [6].…”
Section: Introductionmentioning
confidence: 99%
“…Integration of complex oxide materials with traditional electronic materials such as silicon (Si) and III–V semiconductors has attracted tremendous attention and efforts are being spent to overcome the growth challenges due to oxidation of the semiconducting materials and/or large lattice mismatch between those . A breakthrough occurred for the growth of strontium‐titanate (SrTiO 3 or STO) on Si, where, by introducing a 1/2 monolayer strontium (Sr) as a template, the oxidation of Si is prevented and renders the epitaxial growth of STO on Si by molecular beam epitaxy (MBE) possible .…”
mentioning
confidence: 99%
“…Therefore, integrating TMOs with GaN opens up many possibilities of novel functional device concepts. A lot of effort has been spent on the control of epitaxial growth of functional oxides, such as ferroelectric barium‐titanate (BaTiO 3 ) and Pb(Zr 1‐ x Ti x )O 3 , on GaN . However, neither high crystallinity nor direct deposition of these oxides on GaN has been achieved.…”
mentioning
confidence: 99%