Epitaxial Growth and Ferroelectricity of BaTiO3on SrRuO3/TiO2Buffered GaN

Luo, Wenbo; Zhu, Jing; Li, Y. R.; Zhang, Y.; Chen, H.

doi:10.1080/00150193.2010.484334

Cited by 4 publications

(4 citation statements)

References 16 publications

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“…2b shows the narrow scan spectrum of Ba for the BaTiO 3 thin film. It can be seen from the XPS spectra of Ba 3d that there exists one electron state of Ba 3d 5 in the detectable surface region with a binding energy of 779.6 eV. The Ba 3d 5/2 state corresponds to the α state, which is associated with the pervoskite structure [30,31].…”

Section: X-ray Photoelectron Spectroscopy (Xps)mentioning

confidence: 99%

“…The BaTiO 3 thin films with perovskite structure are of particular interest for electronic device applications due to their useful ferroelectric properties [1][2][3]. Many attempts have been tried to * E-mail: chbhosale@gmail.com integrate the ferroelectric thin films of BaTiO 3 to design non-volatile memory devices and integrated transducers [4,5]. Initially, various research groups have been working on the bulk form of BaTiO 3 but nowadays, due to downsizing and miniaturization of integrated circuits, there are more and more demands imposed on the thin films of BaTiO 3 technological applications [6].…”

Section: Introductionmentioning

confidence: 99%

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Structural and electrical properties of barium titanate (BaTiO3) thin films obtained by spray pyrolysis method

Kumbhar

Mahadik

Chougule

et al. 2015

Materials Science-Poland

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Barium titanate (BaTiO 3 ) thin films have been prepared using the spray pyrolysis method. The films were deposited onto a glass substrate at varying substrate temperature ranging from 250 to 350°C with the interval of 50°C. The structural, morphological, electrical and dielectric properties of the deposited films have been studied. The X-ray diffraction pattern confirmed the polycrystalline nature of the films with a cubic crystal structure. X-ray photoelectron spectroscopy (XPS) showed a good agreement of the thin films stoichiometry with BaTiO 3 . A presence of Ba, Ti and O in the BaTiO 3 thin films was observed by energy dispersive X-ray analysis. The scanning electron microscopy (SEM) showed the heterogeneous distribution of cubical grains all over the substrate. The grain size decreased with an increase in substrate temperature. The dielectric constant and dielectric loss showed the dispersion behaviour as a function of frequency, measured in the frequency range of 20 Hz to 1 MHz. The AC conductivity (σ ac ) measurement showed the linear nature of obtained films, which confirms conduction mechanism due to small polarons. Impedance spectroscopy has been used to study the electrical behaviour of BaTiO 3 ferroelectric thin films. The ferroelectric hysteresis loop has been recorded at room temperature.

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Section: X-ray Photoelectron Spectroscopy (Xps)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structural and electrical properties of barium titanate (BaTiO3) thin films obtained by spray pyrolysis method

Kumbhar

Mahadik

Chougule

et al. 2015

Materials Science-Poland

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“…Integration of complex oxide materials with traditional electronic materials such as silicon (Si) and III–V semiconductors has attracted tremendous attention and efforts are being spent to overcome the growth challenges due to oxidation of the semiconducting materials and/or large lattice mismatch between those . A breakthrough occurred for the growth of strontium‐titanate (SrTiO 3 or STO) on Si, where, by introducing a 1/2 monolayer strontium (Sr) as a template, the oxidation of Si is prevented and renders the epitaxial growth of STO on Si by molecular beam epitaxy (MBE) possible .…”

mentioning

confidence: 99%

“…Therefore, integrating TMOs with GaN opens up many possibilities of novel functional device concepts. A lot of effort has been spent on the control of epitaxial growth of functional oxides, such as ferroelectric barium‐titanate (BaTiO 3 ) and Pb(Zr 1‐ x Ti x )O 3 , on GaN . However, neither high crystallinity nor direct deposition of these oxides on GaN has been achieved.…”

mentioning

confidence: 99%

Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr_0.52Ti_0.48O₃ on GaN/AlGaN/Si(111) Substrate

Liao

Gauquelin

et al. 2017

Adv Materials Inter

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COMMUNICATION (1 of 8)Integration of complex oxide materials with traditional electronic materials such as silicon (Si) and III-V semiconductors has attracted tremendous attention and efforts are being spent to overcome the growth challenges due to oxidation of the semiconducting materials and/or large lattice mismatch between those. [1][2][3][4][5][6][7][8][9] A breakthrough occurred for the growth of strontium-titanate (SrTiO 3 or STO) on Si, where, by introducing a 1/2 monolayer strontium (Sr) as a template, the oxidation of Si is prevented and renders the epitaxial growth of STO on Si by molecular beam epitaxy (MBE) possible. [1,2] Another strategy is to deposit an yttria-stabilized zirconia (YSZ) buffer layer to remove Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZr x Ti 1-x O 3 ) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr 1-x Ti x )O 3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr 0.52 Ti 0.48 ) O 3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.

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Effects of SrTiO3/TiO2 buffer layer on structural and electrical properties of BiFeO3 thin films grown on GaN (0002)

Luo

Zhu

Zeng

et al. 2011

Journal of Applied Physics

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Articles you may be interested in Finite size effects in ferroelectric-semiconductor thin films under open-circuit electric boundary conditions The size effects of 0.8SrBi 2 Ta 2 O 9-0.2Bi 3 TiNbO 9 thin films, prepared by metalorganic deposition technique, were studied by determining how the ferroelectric properties vary with film thickness and grain size. It was found that the ferroelectric properties were determined by the grain size, and not by the thickness of the film in our studied thickness range of 80-500 nm. A 80 nm thick film showed good ferroelectric properties similar to the 500 nm thick film. The possible mechanisms for the size effects in SBT-BTN films are discussed.

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Epitaxial Growth and Ferroelectricity of BaTiO₃on SrRuO₃/TiO₂Buffered GaN

Cited by 4 publications

References 16 publications

Structural and electrical properties of barium titanate (BaTiO3) thin films obtained by spray pyrolysis method

Structural and electrical properties of barium titanate (BaTiO3) thin films obtained by spray pyrolysis method

Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr_0.52Ti_0.48O₃ on GaN/AlGaN/Si(111) Substrate

Effects of SrTiO3/TiO2 buffer layer on structural and electrical properties of BiFeO3 thin films grown on GaN (0002)

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Epitaxial Growth and Ferroelectricity of BaTiO3on SrRuO3/TiO2Buffered GaN

Cited by 4 publications

References 16 publications

Structural and electrical properties of barium titanate (BaTiO3) thin films obtained by spray pyrolysis method

Structural and electrical properties of barium titanate (BaTiO3) thin films obtained by spray pyrolysis method

Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate

Effects of SrTiO3/TiO2 buffer layer on structural and electrical properties of BiFeO3 thin films grown on GaN (0002)

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Epitaxial Growth and Ferroelectricity of BaTiO₃on SrRuO₃/TiO₂Buffered GaN

Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr_0.52Ti_0.48O₃ on GaN/AlGaN/Si(111) Substrate