Electrical Properties and Thermodynamic Stability of Sr(Ti1-x,Rux)O3 Thin Films Deposited by Inductive-Coupling-Plasma-Induced RF Magnetron Sputtering

Ohara, Ryoichi; Schimizu, Tatsuo; Sano, Kenya; Yoshimoto, Masahiko; Kawakubo, Takashi

doi:10.1143/jjap.40.1384

Cited by 10 publications

(6 citation statements)

References 11 publications

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“…Simultaneously the lattice part disappeared completely from the Sr3d spectrum in both cases. Similar ruthenium oxidation and reduction processes were presented before by Hartmann et al, 42 for metallic Ru thin films annealed in air, and Ohara et al, 46 for Sr͑Ti 1−x Ru x ͒O 3 thin films annealed in hydrogen. The presented Ru3d spectra always consisted of a low binding energy line related to metallic ruthenium and one or more lines, shifted by 1 -2.5 eV to higher binding energies, related to oxidized ruthenium.…”

Section: -2supporting

confidence: 80%

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Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions

Młynarczyk

Szot

Petraru

et al. 2007

Journal of Applied Physics

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Imperfect stoichiometry and heterogeneity of a surface layer of SrRuO3 epitaxial thin films, grown on SrTiO3 substrates, are presented with the help of various methods. Rutherford backscattering spectroscopy, x-ray photoemission spectroscopy (XPS), and time of flight secondary ion mass spectrometry are used to obtain information about the stoichiometry and uniformity of the SrRuO3 structure. The temperature of chemical decomposition is first determined for polycrystalline samples under different conditions using thermogravimetry analysis. Then the determined values are used for thin film annealings in high and low oxygen pressure ambients, namely, air, vacuum, and hydrogen. The surface deterioration of the thin film together with changes in its electronic structure is investigated. O1s and Sr3d core lines measured by XPS for as-made samples obviously consist of multiple components indicating different chemical surroundings of atoms. Thanks to different incident beam angle measurements it is possible to distinguish between interior and surface components. Valence band spectra of the interior of the film are consistent with theoretical calculations. After annealing, the ratio of the different components changes drastically. Stoichiometry near the surface changes, mostly due to ruthenium loss (RuOX) or a segregation process. The width and position of the Ru3p line for as-made samples suggest a mixed oxidation state from metallic to fully oxidized. Long annealing in hydrogen or vacuum ambient leads to a complete reduction of ruthenium to the metallic state. Local conductivity atomic force microscopy scans reveal the presence of nonconductive adsorbates incorporated in the surface region of the film. Charge transport in these measurements shows a tunneling character. Scanning tunneling microscopy scans show some loose and mobile adsorbates on the surface, likely containing hydroxyls. These results suggest that an adequate description of a SrRuO3 thin film should take into account imperfections and high reactivity of its surface region.

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Section: -2supporting

confidence: 80%

“…Annealing of Sr͑Ti 1−x Ru x ͒O 3 in hydrogen caused the oxide line to shift to lower binding energies and finally to vanish, while the metal line appeared and grew in size. 46 In this case a reduction clearly took place with the presence of intermediate oxidation states.…”

Section: -2mentioning

confidence: 94%

Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions

Młynarczyk

Szot

Petraru

et al. 2007

Journal of Applied Physics

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“…Furthermore, Gupta, Hussey, and Shaw (1996) showed that epitaxial growth of thin films of SrTi 1Àx Ru x O 3À by PLD at low oxygen partial pressure [< 10 À3 mTorr (necessary to make possible the usage of standard RHEED during deposition)] assisted by atomic oxygen, clearly exhibit degraded magnetic and electronic properties. The degree of degradation was later found to be dependent on the exact initial composition (Ohara et al, 2001).…”

Section: Influence Of Stoichiometrymentioning

confidence: 98%

Structure, physical properties, and applications ofSrRuO3thin films

et al. 2012

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SrRuO 3 is endowed with three remarkable features. First, it is a moderately correlated material that exhibits several novel physical properties; second, it permits the epitaxial growth of essentially single-crystal films; and third, because it is a good conductor, it has attracted interest as a conducting layer in epitaxial heterostructures with a variety of functional oxides. In this review, the present state of knowledge of SrRuO 3 thin films is summarized. Their role as a model system for studying magnetism and electron transport characterized by intermediate electron correlation and large magnetocrystalline anisotropy is demonstrated. The materials science of SrRuO 3 thin film growth is reviewed, and its relationship to electronic, magnetic, and other physical properties is discussed. Finally, it is argued that, despite all that has been learned, a comprehensive understanding of SrRuO 3 is still lacking and challenges remain.American Physical Society

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“…MS has been used to grow a variety of epitaxial oxides of interest as optical waveguides, [217] light emitters, [218][219][220][221] capacitor dielectrics, [222,223] high-T c superconductors, [224][225][226][227][228] photocatalysts, [229] gas sensors, [83] ferroelectrics, [230][231][232][233] piezoelectrics, [46,234] conductive oxides, [235][236][237][238][239] gate dielectrics, [29,[240][241][242][243][244] magnetoresistive materials, [245][246][247][248][249][250][251][252][253][254][255][256][257] general purpose insulators, [258,259] magnetic insulators, [260,261...…”

Section: Magnetron Sputteringmentioning

confidence: 99%

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

2009

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The detailed science and technology of crystalline oxide film growth using vacuum methods is reviewed and discussed with an eye toward gaining fundamental insights into the relationships between growth process and parameters, film and interface structure and composition, and electronic, magnetic and photochemical properties. The topic is approached first from a comparative point of view based on the most widely used growth methods, and then on the basis of specific material systems that have generated very high levels of interest. Emphasis is placed on the wide diversity of structural, electronic, optical and magnetic properties exhibited by oxides, and the fascinating results that this diversity of properties can produce when combined with the degrees of freedom afforded by heteroepitaxy.

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Electrical Properties and Thermodynamic Stability of Sr(Ti_1-x,Ru_x)O₃ Thin Films Deposited by Inductive-Coupling-Plasma-Induced RF Magnetron Sputtering

Cited by 10 publications

References 11 publications

Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions

Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions

Structure, physical properties, and applications ofSrRuO3thin films

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

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