Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

Abstract

The detailed science and technology of crystalline oxide film growth using vacuum methods is reviewed and discussed with an eye toward gaining fundamental insights into the relationships between growth process and parameters, film and interface structure and composition, and electronic, magnetic and photochemical properties. The topic is approached first from a comparative point of view based on the most widely used growth methods, and then on the basis of specific material systems that have generated very high levels of interest. Emphasis is placed on the wide diversity of structural, electronic, optical and magnetic properties exhibited by oxides, and the fascinating results that this diversity of properties can produce when combined with the degrees of freedom afforded by heteroepitaxy.

TiO2 /Ferroelectric Heterostructures as Dynamic Polarization-Promoted Catalysts for Photochemical and Electrochemical Oxidation of Water

“…These structures are denoted TiO 2 =STO in the following. Anatase has a small lattice mismatch with STO, so it can be grown on STO epitaxially [18]. While defects, e.g., oxygen vacancies, are almost invariably present in the experimentally prepared materials, it is reasonable to restrict to ideal, defect-free heterostructures in this first study.…”

Resistance switching at the interface of LaAlO3/SrTiO3

“…The discovery of the metallic conduction at the interface between two insulating oxides, LaAlO 3 ͑LAO͒ and SrTiO 3 ͑STO͒, 1 has attracted intensive attention in recent years. [2][3][4][5][6][7][8][9] However, no consensus on its origin has been achieved.…”

Ferroelectric Field Effect Control of Magnetism in Multiferroic Heterostructures

“…These opportunities are a direct consequence of reduced dimensionality and/or interfacial phenomena from proximity effects between dissimilar materials Zubko et al (2011). Progress in growth techniques Chambers (2010); Eckstein & Bozovic (1995); Martin et al (2010); McKee et al (1998); Posadas et al (2007); Reiner et al (2009) ;Schlom et al (1992); Vaz et al (2009a); Vrejoiu et al (2008), nanoscale characterization tools Zhu (2005), and first principles calculations Cohen (2000); Fennie (2008); Picozzi & Ederer (2009); Rabe & Ghosez (2007); Spaldin & Pickett (2003); have been instrumental to our present ability to control matter down to the atomic scale and to fabricate nanoscale device structures with the potential for technological applications. Examples of current research work that aims at addressing some of the current grand challenges include the search for ultrasensitive sensors and actuators for applications in areas such as medicine and energy harvesting, the development of smaller and more energy efficient electronic devices that could replace current CMOS switches, and the design of intelligent systems that incorporate complex operations at the core processing level.…”