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An improvement in gamma-ray energy resolution is demonstrated for a room-temperature operated CdZnTe semiconductor detector that incorporates a parallel strip pseudo-Frisch-grid detector design. The device construction allows primarily for the measurement of electron charge carriers and not hole charge carriers. The detector is a three-terminal device that requires signal output to only one preamplifier, and its simplistic design offers an alternative method to single charge carrier type sensing to that of coplanar semiconductor gamma-ray detector designs.

This study demonstrates the full infiltration of gel polymer electrolyte into silicon-coated vertically aligned carbon nanofibers (Si-VACNFs), a high-capacity 3D nanostructured anode, and the electrochemical characterization of its properties as an effective electrolyte/separator for future all-solid-state lithium-ion batteries. Two fabrication methods have been employed to form a stable interface between the gel polymer electrolyte and the Si-VACNF anode. In the first method, the drop-casted gel polymer electrolyte is able to fully infiltrate into the open space between the vertically aligned core-shell nanofibers and encapsulate/stabilize each individual nanofiber in the polymer matrix. The 3D nanostructured Si-VACNF anode shows a very high capacity of 3450 mAh g(-1) at C/10.5 (or 0.36 A g(-1)) rate and 1732 mAh g(-1) at 1C (or 3.8 A g(-1)) rate. In the second method, a preformed gel electrolyte film is sandwiched between an Si-VACNF electrode and a Li foil to form a half-cell. Most of the vertical core-shell nanofibers of the Si-VACNF anode are able to penetrate into the gel polymer film while retaining their structural integrity. The slightly lower capacity of 2800 mAh g(-1) at C/11 rate and ∼1070 mAh g(-1) at C/1.5 (or 2.6 A g(-1)) rate have been obtained, with almost no capacity fade for up to 100 cycles. Electrochemical impedance spectroscopy does not show noticeable changes after 110 cycles, further revealing the stable interface between the gel polymer electrolyte and the Si-VACNFs anode. These results show that the infiltrated flexible gel polymer electrolyte can effectively accommodate the stress/strain of the Si shell due to the large volume expansion/contraction during the charge-discharge processes, which is particularly useful for developing future flexible solid-state lithium-ion batteries incorporating Si-anodes.

Bulk GaAs has undergone extensive research by several groups in order to ascertain its usefulness as a room temperature radiation spectrometer. The results of an experimental program studying the properties of detectors fabricated from bulk GaAs are summarized in this paper. Electric field models of the active region are compared with measured results. Limitations of bulk LEC GaAs as a material for radiation spectrometers are discussed.

CdZnTe wide band gap compound semiconducting material offers promise as a room temperature operated gamma ray spectrometer. Position-dependent free charge carrier losses during transport can prevent efficient charge carrier extraction from semiconductor detectors and severely reduce energy resolution. Hole trapping losses in CdZnTe radiation detectors are far worse than electron trapping losses and resolution degradation in CdZnTe detectors results primarily from severe hole trapping during transport. Coplanar radiation detectors improve energy resolution by sensing the induced charge primarily from the motion of electrons. Demonstrated is an alternative approach to single free charge carrier sensing, in which a parallel strip Frisch grid is fabricated on either side of a parallelepiped block. The detectors are three terminal devices, but require only one preamplifier for the output signal. The prototype devices demonstrate a considerable increase in energy resolution when operated in the true Frisch grid mode rather than the planar mode, with a demonstrated room temperature energy resolution for 662 keV gamma rays of 5.91% at FWHM for a 10"x 2mm x 10" device. Presently, high surface leakage currents prevent large voltages from being applied to the devices, which ultimately reduces their maximum achievable energy resolution. Further improvements are expected with the realization of reduced surface leakage currents.

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