1996
DOI: 10.1016/s0168-9002(96)00352-x
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1-D position sensitive single carrier semiconductor detectors

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Cited by 130 publications
(52 citation statements)
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“…The potential of CdZnTe has been demonstrated through many material and detector technology developments over the last decade. [1][2][3][4][5][6][7][8][9][10][11][12][13] The material has the desirable intrinsic properties of a wide bandgap necessary for room-temperature operation and a high average atomic number for efficient gamma-ray stopping. Furthermore, the CdZnTe material that is commercially available today exhibits negligible polarization effects, has a high bulk resistivity, and has reasonably good electron collection properties.…”
Section: Introductionmentioning
confidence: 99%
“…The potential of CdZnTe has been demonstrated through many material and detector technology developments over the last decade. [1][2][3][4][5][6][7][8][9][10][11][12][13] The material has the desirable intrinsic properties of a wide bandgap necessary for room-temperature operation and a high average atomic number for efficient gamma-ray stopping. Furthermore, the CdZnTe material that is commercially available today exhibits negligible polarization effects, has a high bulk resistivity, and has reasonably good electron collection properties.…”
Section: Introductionmentioning
confidence: 99%
“…7,8 In our detector, the anode contact is pixellated and the cathode side faces X-ray sources due to the complex electronics readout systems closely attached to the anode side. For a given X-ray interaction in the detector, the signal gathered by an anode pixel is proportional to the charge induced by the interaction, while the cathode side collects a signal that is proportional to the induced charge times the depth of the interaction.…”
Section: Depth Sensitive Czt Detectormentioning
confidence: 99%
“…This requires the corrections for electron trapping that can be handled by adjusting the relative gain in the subtraction circuit of the anode preamplifiers (Luke, 1996;He et al, 1996). In addition, a method using interaction depth sensing to correct for electron trapping in material is employed.…”
Section: Introductionmentioning
confidence: 99%