Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer

McGregor, Douglas S.; Rojeski, Ronald A.; Knoll, G.F.; Terry, Fred L.; East, J.R.; Eisen, Y.

doi:10.1016/0168-9002(94)90233-x

Cited by 49 publications

(15 citation statements)

References 39 publications

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“…[2,3]) in terms of the ionisation of deep levels such as EL2. A recently published model by McGregor et al [4] which includes a field-enhanced capture rate produces field distributions which are in agreement with our data reported in reference [1].…”

Section: Introductionsupporting

confidence: 92%

“…For comparison, figure 5 shows similar data calculated using equal values of the electron and hole mean lifetimes of 10ns [4]. In this case the slower hole drift velocity causes the holes' mean drift length to be less than that of the electrons and the CCE decreases towards the rear of the detector as the contribution from the hole current increases.…”

Section: B Gamma Radiationmentioning

confidence: 68%

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Charge collection response of SI GaAs p-i-n detectors

Sellin

Buttar

Manolopoulos

et al. 1995

IEEE Trans. Nucl. Sci.

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The charge collection response of semi insulating GaAs pin detectors to alpha particles has been measured and compared to the results of a simple charge carrier drift model. The model uses an electric field distribution which had been measured using a surface probing technique. By comparing the simulated data with the experimentally measured charge collection efficiency mean drift lifetimes have been deduced for the charge carriers. The model has also been used to simulate the charge collection response of GaAs detectors to gamma rays and to minimum ionising particles.

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Section: Introductionsupporting

confidence: 92%

Section: B Gamma Radiationmentioning

confidence: 68%

Charge collection response of SI GaAs p-i-n detectors

Sellin

Buttar

Manolopoulos

et al. 1995

IEEE Trans. Nucl. Sci.

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“…In fact it has been theoretically [9,10] and experimentally [4,5, 11,12] shown that in SI LEC bulk GaAs detectors two different regions are present: a high field region, near the Schottky contact, and a low field region, near the ohmic contact.…”

Section: Introductionmentioning

confidence: 99%

Performances of SI GaAs detectors fabricated with implanted ohmic contacts

Nava

Alietti²,

Canali³

et al. 1996

IEEE Trans. Nucl. Sci.

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The slow component of the output pulse of Semi-Insulating (SI) Gallium Arsenide (GaAs) particle detectors, which affects charge collection efficiency (cce), has been generally attributed to trapping/detrapping effects. However, most of the detectors analyzed in the literature can only be operated below the voltage v d necessary to extend the electric field all the way to the ohmic contact, making difficult to distinguish between the effect of the non-active part of the detector and that of trapping/detrapping. To do that, we have carefully analyzed the output signals of SI GaAs detectors, operated below and above v d and irradiated with 241Am a particles.When the detector is biased below v d the output signals are affected also by the non-active part of the detector itself, while, when the detector is operated above Vd , the output signals are only affected by trappingldetrapping of charge carriers. We found that trappingldetrapping is only relevant for the hole contribution to the signal. Trapping/detrapping effects are in agreement with the characteristics of deep levels present in the detectors as analyzed by means of PICTS (Photo Induced Current Transient Spectroscopy) and P-DLTS (Photo Deep Level Transient Spectroscopy).

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“…Recent experiments [3][4][5][6][7][8][9] that use the electro-optic Pockels effect in order to measure the local electric fields in the sample have opened up the way towards a more detailed quantitative understanding of the domains and the trapping process in SI GaAs. There is a considerable interest in the properties of the EL2 defect because SI GaAs has an increasing relevance, e.g., as a particle detector [10][11][12][13] and for optical data storage. 14 The reader may well wonder why the transport properties of SI GaAs should be of any particular interest.…”

Section: Introductionmentioning

confidence: 99%

Slow domains in semi-insulating GaAs

Neumann

2001

Journal of Applied Physics

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Articles you may be interested inBroadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam Semi-insulating GaAs shows current oscillations if a high dc voltage is applied to a sample. These oscillations are caused by traveling high-electric-field domains that are formed as a result of electric-field-enhanced electron trapping. This article describes the various types of experiments that have been carried out with this system, including recent ones that use the electro-optic Pockels effect in order to measure the local electric fields in the sample in a highly accurate manner. An historical overview of the theoretical developments is given and shows that no satisfying theory is currently available. A list of all the required ingredients for a successful theory is provided and the experimental data are explained in a qualitative manner. Furthermore, the main electron trap in semi-insulating GaAs is the native defect EL2, the main properties of which are described.

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Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer

Cited by 49 publications

References 39 publications

Charge collection response of SI GaAs p-i-n detectors

Charge collection response of SI GaAs p-i-n detectors

Performances of SI GaAs detectors fabricated with implanted ohmic contacts

Slow domains in semi-insulating GaAs

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