Slow domains in semi-insulating GaAs

Neumann, Anke

doi:10.1063/1.1377023

Cited by 74 publications

(19 citation statements)

References 138 publications

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“…When the voltage V approaches the threshold level V cr from below, the current I in the structures exhibits oscillations of a relatively small amplitude. Such a behavior of SI-GaAs samples has been observed previously (see, e.g., recent review [2] devoted to the problem of domain instability in SI GaAs). For V ≥ V cr , the current usually oscillates in a broad range of voltages, whereby both regular and irregular variations can be observed.…”

Section: Resultsmentioning

confidence: 67%

“…As is known, current pulsations of large amplitude in such materials are related to the dynamics of electrical domains (generation, motion along the sample, and damping at the contacts). It is suggested that electrical instability observed in the samples of this type is related to an increase in the rate of trapping carriers by EL2 centers heated by the electric field [2]. The electrical instability of the GaAs cathode in a planar SGDGS was analyzed using both the current and DLE data is shown in fig.…”

Section: Resultsmentioning

confidence: 99%

“…The theory [1] and experiment [2] showed that the current flowing through a semiconductor can oscillate if a sufficiently high dc bias is applied to the sample. These oscillations are caused by domains of high electric field that travel from cathode to anode.…”

Section: Introductionmentioning

confidence: 99%

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Electrical instability in a semiconductor gas discharge system

Salamov¹,

Mammadov²

2005

Cryst. Res. Technol.

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Electrical instability in a SI GaAs plates of the semiconductor gas discharge gap system (SGDGS) is studied experimentally in a wide range of the gas pressures, interelectrode distances and different diameters of the cathode areas. While being driven with a stationary voltage, it generates current and discharge light emission (DLE) instabilities with different amplitudes of the oscillation. It is shown that under the experimental conditions the interelectrode distance played only a passive role and was not responsible for the appearance of the DLE instability. At the same time for different diameters D of the GaAs plate areas the expanded range of current and DLE oscillations are observed. SGDGS with an N-shaped CVC was analyzed using both the current and DLE data showing the electrical instability in the GaAs cathode. It was found that application of high feeding voltage to this cathode give rise to non-uniform spatial distribution of the DLE, which disturbed the operation of the system. The experiment presents also a new metod to study and visualization of the electrical instabilities in high-resistivity GaAs plates of large diameter.

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Section: Resultsmentioning

confidence: 67%

Section: Resultsmentioning

confidence: 99%

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Electrical instability in a semiconductor gas discharge system

Salamov¹,

Mammadov²

2005

Cryst. Res. Technol.

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“…Patterns in the system are formed due to the coupling of processes of charge transport in two layers, one layer being a linear high-resistance photodetector, while the other layer is a gas discharge domain and is a medium with transport properties that are strongly non-linear. 6,7 At the same time, in the converter cell the discharge gap does not distort the distribution of the current density in the photodetector. The discharge gap, however, can be used to monitor and study quantitatively the spatial distributions of the current because of the emission of visible radiation by the gas.…”

Section: Introductionmentioning

confidence: 96%

Influence of photodetector peculiarities on operation of ionization-type semiconductor photographic system

Salamov¹

2006

The Imaging Science Journal

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The dependence of the electrical instabilities in the GaAs photodetector of an ionization-type semiconductor photographic system on control parameters is investigated. It is found that active properties of GaAs photodetectors that manifest themselves at high electric fields play an important role in the observed phenomena. It is established that the presence of the deep electronic levels of defects, the so-called EL2 centres, give rise to the N-type negative differential conductivity of the material and, as a consequence, to oscillations in current when a dc voltage of a high enough magnitude is applied to a GaAs photodetector. At the same time, instabilities of spatially non-uniform distributions resulting in the formation of multiple current filaments with increasing voltage above the critical value have been observed. It should also be noted that the current oscillations in the unstable regions may negatively affect the characteristics of devices based on semi-insulating GaAs.

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“…This effect is well known to exist in some types of semi-insulating GaAs and is due to an increase in the recombination rate of nonequilibrium free carriers in the semiconductor at a high electric field (see, e.g., the review in Ref. [12]. Applying such an electrode in the SGD device may yield complicated spatiotemporal patterns when the voltage of the electrode reaches a critical value [13][14][15].…”

Section: Introductionmentioning

confidence: 97%

Self-organized patterns in successive bifurcations in planar semiconductor-gas-discharge device

Astrov¹,

Lodygin²,

Portsel³

2015

Phys. Rev. E

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The formation of dissipative structures is investigated in a planar semiconductor-gas-discharge device at room temperature. The width of the discharge gap is about 1 mm. The gap is filled with nitrogen at a pressure that corresponds to the discharge operation at the right branch of the Paschen curve. Wafers of semi-insulating GaAs that exhibit linear transport in the whole range of voltage and current studied are used as semiconductor electrodes. In addition to the earlier investigated Andronov-Hopf bifurcation, a different mode of self-organization of the device is observed, where the transport of charge proceeds through an ensemble of pulsating current filaments. The corresponding critical current for the present bifurcation does not depend on the polarity of the bias voltage, while the spatiotemporal dynamics of a pattern differs substantially for a change in the polarity. Pulsating filaments can form a spatially ordered pattern when the GaAs electrode is under the positive potential. We also observe self-organization modes, where pulsating filaments form an irregular spatiotemporal dynamics of a pattern. The data obtained are briefly discussed in the frame of corresponding theoretical results in the field.

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Slow domains in semi-insulating GaAs

Cited by 74 publications

References 138 publications

Electrical instability in a semiconductor gas discharge system

Electrical instability in a semiconductor gas discharge system

Influence of photodetector peculiarities on operation of ionization-type semiconductor photographic system

Self-organized patterns in successive bifurcations in planar semiconductor-gas-discharge device

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