We demonstrate the controlled and reproducible structuring of surfaces of muscovite mica with the tip of an atomic force microscope operated in contact mode under ambient conditions. By repeated scanning of the tip along a predefined pattern on a cleaved mica surface at forces between 100 nN and 4 µN, mechanically induced etching was observed on the atomic scale. Using silicon nitride tips, no tip wear was observed during structuring. No debris was found on the surface as a result of the structuring process, indicating the atomic-scale nature of the wear process. Line widths down to 3 nm were achieved, while at the same time patterns on a wide range of length scales between 5 nm and 100 µm were generated reproducibly. The results can be explained by abrasive wear on the atomic scale due to sliding friction. The experiments allow the study of tribochemistry and abrasive wear on the atomic and molecular scale. At the same time, they represent an approach for high-precision structuring of surfaces within a wide range of length scales.

There are only few quantitative studies commenting on the writing process in dip-pen nanolithography with lipids. Lipids are important carrier ink molecules for the delivery of bio-functional patters in bio-nanotechnology. In order to better understand and control the writing process, more information on the transfer of lipid material from the tip to the substrate is needed. The dependence of the transferred ink volume on the dwell time of the tip on the substrate was investigated by topography measurements with an atomic force microscope (AFM) that is characterized by an ultra-large scan range of 800 × 800 μm(2). For this purpose arrays of dots of the phospholipid1,2-dioleoyl-sn-glycero-3-phosphocholine were written onto planar glass substrates and the resulting pattern was imaged by large scan area AFM. Two writing regimes were identified, characterized of either a steady decline or a constant ink volume transfer per dot feature. For the steady state ink transfer, a linear relationship between the dwell time and the dot volume was determined, which is characterized by a flow rate of about 16 femtoliters per second. A dependence of the ink transport from the length of pauses before and in between writing the structures was observed and should be taken into account during pattern design when aiming at best writing homogeneity. The ultra-large scan range of the utilized AFM allowed for a simultaneous study of the entire preparation area of almost 1 mm(2), yielding good statistic results.

Optimizing and monitoring the growth conditions of Pt films, often used as bottom electrodes in multiferroic material systems, represents a highly relevant issue that is of importance for controlling the crystalline quality and performance of ferroelectric oxides such as, e.g. LuFeO 3 . We performed a time-resolved monitoring of the growth and morphology of Pt films during pulsed laser deposition (PLD) in dependence on the grown film effective thickness and on the growth temperature Tg using in situ grazing incidence small-angle X-ray scattering (GISAXS). Through real-time analysis and modeling of GISAXS patterns, we could fully characterize the influence of Tg on the morphology and on the growth kinetics of the Pt layers. Consequently, critical and characteristic effective thicknesses for the transitions nucleation phase (I)/coalescence phase (II) and coalescence phase (II)/coarsening phase (III) could be determined. In combination with complementary microscopic imaging and chemical mapping via combined SEM/EDXS, we demonstrate the occurrence of a morphological progression in the Pt PLD-grown Pt films, changing from grains at room temperature to a 3D-island morphology at 300 °C, further to a hole-free structure at 500 °C, and finally to a channel structure for 700 and 900 °C. The film topography, as characterized by atomic force microscopy (AFM), favors the PLD growth of Pt layers at temperatures beyond 700 °C where the film is homogeneous, continuous, and hole-free with a flat and smooth surface. The double dependency of the percolation transition on the film effective thickness and on the growth temperature has been established by measuring the electrical conductivity.

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SummaryWe describe an atomic force microscope (AFM) for the characterization of self-sensing tunneling magnetoresistive (TMR) cantilevers. Furthermore, we achieve a large scan-range with a nested scanner design of two independent piezo scanners: a small high resolution scanner with a scan range of 5 × 5 × 5 μm3 is mounted on a large-area scanner with a scan range of 800 × 800 × 35 μm3. In order to characterize TMR sensors on AFM cantilevers as deflection sensors, the AFM is equipped with a laser beam deflection setup to measure the deflection of the cantilevers independently. The instrument is based on a commercial AFM controller and capable to perform large-area scanning directly without stitching of images. Images obtained on different samples such as calibration standard, optical grating, EPROM chip, self-assembled monolayers and atomic step-edges of gold demonstrate the high stability of the nested scanner design and the performance of self-sensing TMR cantilevers.