2004
DOI: 10.1002/sia.1690
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Controlled structuring of mica surfaces with the tip of an atomic force microscope by mechanically induced local etching

Abstract: We demonstrate the controlled and reproducible structuring of surfaces of muscovite mica with the tip of an atomic force microscope operated in contact mode under ambient conditions. By repeated scanning of the tip along a predefined pattern on a cleaved mica surface at forces between 100 nN and 4 µN, mechanically induced etching was observed on the atomic scale. Using silicon nitride tips, no tip wear was observed during structuring. No debris was found on the surface as a result of the structuring process, i… Show more

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Cited by 31 publications
(21 citation statements)
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References 28 publications
(14 reference statements)
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“…Usually, the force needed for lithography on the GFPH 6 monolayer was less than 20 nN. This force is much less than the threshold of direct lithography on the mica surfaces and will not destroy the mica surface (Liu et al, 2005d;Miyake, 1995;MÜ ler et al, 2004). The tip employed for lithography and imaging can be used a long time without obvious degradation.…”
Section: Fig 2 a And Bmentioning
confidence: 98%
“…Usually, the force needed for lithography on the GFPH 6 monolayer was less than 20 nN. This force is much less than the threshold of direct lithography on the mica surfaces and will not destroy the mica surface (Liu et al, 2005d;Miyake, 1995;MÜ ler et al, 2004). The tip employed for lithography and imaging can be used a long time without obvious degradation.…”
Section: Fig 2 a And Bmentioning
confidence: 98%
“…Line widths down to 3 nm were achieved, while at the same time patterns on a wide range of length scales between 5 nm and 100 µm are generated reproducibly [6]. This can be explained by abrasive wear on the atomic scale due to sliding friction.…”
Section: Applicationsmentioning
confidence: 73%
“…Yang and Sacher reported their research on the influence of set point AQ:2 in Cu particle manipulation with AFM [6]. In 2004, Muller et al performed a 3-nm width lithography in mica surface with AFM [7]. In 2005, for the first time, Sugimoto et al realized Sn atom manipulation on the surface of Ge in normal temperature [8].…”
Section: Afm-based Nanomanipulationmentioning
confidence: 99%