Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

Helfrich, Mathieu; Hu, Dongzhi; Hendrickson, Joshua R.; Gehl, Michael; Rülke, D.; Gröger, Roland; Litvinov, D.; Lindén, Stefan; Wegener, Martin; Gerthsen, D.; Schimmel, Th.; Hetterich, M.; Kalt, H.; Khitrova, G.; Gibbs, H. M.; Schaadt, D. M.

doi:10.1016/j.jcrysgro.2010.11.162

Cited by 15 publications

(8 citation statements)

References 18 publications

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“…A similar behavior was observed for InAs QDs annealed on flat GaAs substrates under similar conditions [24]. Furthermore, it was possible to get rid of unintentional QDs in between the holes, even for deposited InAs amounts as high as 2.6 ML [41]. Another dominant feature of the annealing of InAs QDs at high temperature is the desorption of In atoms.…”

Section: 5supporting

confidence: 70%

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Growth and characterization of site‐selective quantum dots

Helfrich

Schroth

Grigoriev

et al. 2012

Physica Status Solidi (a)

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A review on the growth and characterization of site-selective quantum dots (QDs) is presented. First, a theoretical model is used to describe the mechanism leading to the formation of QDs at pre-defined locations. The structural properties of siteselective QDs was revealed and their optical quality was tested. Various parameters, such as hole size, hole depth, or InAs amount, influencing the QD occupation and the QD size are discussed and possible ways to control these are presented.Ordered QD array with multiple dot nucleation (left) and single QD in dry etched hole (right).

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Section: 5supporting

confidence: 70%

“…The potential of this approach to control the structural properties of positioned QDs as well as the QD distribution was investigated. It was shown that double QDs merge into single dots during short annealings of 2:30 min at 500 8C [41]. As a consequence, the size of the annealed QDs is larger than that of the as grown ones.…”

Section: 5mentioning

confidence: 99%

Growth and characterization of site‐selective quantum dots

Helfrich

Schroth

Grigoriev

et al. 2012

Physica Status Solidi (a)

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“…QD nucleation can be controlled by several methods. In prior works, we investigated the influence of hole spacing and post-growth annealing [ 23 , 24 ]. It was also shown by other groups that growth parameters like flux [ 25 ], InAs deposition [ 26 ], and growth temperature [ 27 , 28 ] can influence the nucleation.…”

Section: Introductionmentioning

confidence: 99%

Influence of hole shape/size on the growth of site-selective quantum dots

Mayer¹,

Helfrich

Schaadt³

2013

Nanoscale Res Lett

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The number of quantum dots which nucleate at a certain place has to be controllable for device integration. It was shown that the number of quantum dots per nucleation site depends on the size of the hole in the substrate, but other dimensions of the nucleation site are vague. We report on the influence of hole shape on site-selectively grown InAs quantum dots (QDs) by molecular beam epitaxy. Dry etching of the GaAs wafers was used because of its high anisotropic etching characteristic. Therefore, it was possible to verify the influence of several hole shape parameters on the subsequent QD growth independently. We show that the nucleation of these QDs depends on several properties of the hole, namely its surface area, aspect ratio of the surface area, and depth. Especially, the aspect ratio shows a big influence on the number of nucleating QDs per site. With knowledge of these dependencies, it is possible to influence the number of QDs per site and also its distribution.

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“…It is known, however, that missing QDs in nanoholes and formation of multiple QDs per hole are crucial problems for achieving high performance photonic microdevices. 21) Furthermore, precise control of the size and shape of QDs is also very essential for reproducible device fabrication.…”

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confidence: 99%

Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy

Man

Horiuchi

Shibata

et al. 2012

Appl. Phys. Express

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We have investigated the site-controlled growth of InAs quantum dots (QDs) by using atomic-force-microscope (AFM)-assisted anodic oxidation. It is found that the morphology of the site-controlled QDs strongly depends on the growth temperature, T g ; when QDs are grown at T g 480 C, the obtained QDs are much larger than the nanoholes prepared by AFM oxidation. In contrast, when QDs are grown at T g ¼ 520 C, the diameter of the QDs is limited by that of nanoholes and is almost unchanged with varying InAs supply. The single-layer QD array grown at 520 C showed good optical properties and uniformities. #

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Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

Cited by 15 publications

References 18 publications

Growth and characterization of site‐selective quantum dots

Growth and characterization of site‐selective quantum dots

Influence of hole shape/size on the growth of site-selective quantum dots

Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy

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