Surface plasmon resonances in metallic nanoparticles are of interest for a variety of applications due to the large electromagnetic field enhancement that occurs in the vicinity of the metal surface, and the dependence of the resonance wavelength on the nanoparticle's size, shape, and local dielectric environment. Here we report an engineered enhancement of optical absorption and photocurrent in a semiconductor via the excitation of surface plasmon resonances in spherical Au nanoparticles deposited on the semiconductor surface. The enhancement in absorption within the semiconductor results in increased photocurrent response in Si pn junction diodes over wavelength ranges that correspond closely to the nanoparticle plasmon resonance wavelengths as determined by measurements of extinction spectra. These observations suggest a variety of approaches for improving the performance of devices such as photodetectors, imaging arrays, and photovoltaics.

Scanning force microscopy was used to study localized charge deposition and subsequent transport in Co nanoclusters embedded in SiO 2 deposited on an n-type Si substrate. Co nanoclusters were charged by applying a bias voltage pulse between tip and sample, and electrostatic force microscopy was used to image charged areas, to determine quantitatively the amount of stored charge, and to characterize the discharging process. Charge was deposited controllably and reproducibly within areas ϳ20-50 nm in radius, and an exponential decay in the peak charge density was observed. Longer decay times were measured for positive than for negative charge; this is interpreted as a consequence of the Coulomb-blockade energy associated with single-electron charging of the Co nanoclusters.

Theoretical description of oscillations of electron liquid in large metallic nanospheres (with radius of few tens nm) is formulated within random-phase-approximation semiclassical scheme. Spectrum of plasmons is determined including both surface and volume type excitations. It is demonstrated that only surface plasmons of dipole type can be excited by homogeneous dynamical electric field. The Lorentz friction due to irradiation of electro-magnetic wave by plasmon oscillations is analyzed with respect to the sphere dimension. The resulting shift of resonance frequency turns out to be strongly sensitive to the sphere radius. The form of e-m response of the system of metallic nanospheres embedded in the dielectric medium is found. The theoretical predictions are verified by a measurement of extinction of light due to plasmon excitations in nanosphere colloidal water solutions, for Au and Ag metallic components with radius from 10 to 75 nm. Theoretical predictions and experiments clearly agree in the positions of surface plasmon resonances and in an emergence of the first volume plasmon resonance in the e-m response of the system for limiting big nanosphere radii, when dipole approximation is not exact.

The characteristics of dislocation-related leakage current paths in an AlGaN/GaN heterostructure grown by molecular-beam epitaxy and their mitigation by local surface modification have been investigated using conductive atomic force microscopy. When a voltage is applied between the tip in an atomic force microscope ͑AFM͒ and the sample, a thin insulating layer is formed in the vicinity of the leakage paths where current is observed. As the insulating layer reaches a thickness of 2-3 nm, the leakage current is blocked and subsequent growth of the layer is prevented. Although conductive screw or mixed dislocations are observed, dislocations with a screw component that do not conduct current are also apparent. The reverse-bias leakage current is reduced by a factor of two in a large-area diode fabricated on an area modified in this manner with an AFM compared to typical diodes fabricated on unmodified areas with comparable series resistances, confirming that dislocation-related leakage current paths are a major component of the reverse-bias leakage current in Schottky diodes fabricated on nitride material.

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