The spectrum of nonlinear gain saturation of InGaAsP diode lasers with a buried heterostructure is measured by means of modulation spectroscopy. The underlying physical processes are identified through comparison with theoretical spectra. At the laser line, contributions to the coefficient of self-saturation by spectral hole burning (1.6×10−17 cm3) and carrier heating (1.1×10−17 cm3) of comparable magnitude are found.
Measurement of relaxation resonance, damping, and nonlinear gain coefficient from the sidebands in the field spectrum of a 1.3 μm InGaAsP distributed feedback laser Appl.
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