Measurement of the gain saturation spectrum in InGaAsP diode lasers

Abstract

Measurement of relaxation resonance, damping, and nonlinear gain coefficient from the sidebands in the field spectrum of a 1.3 μm InGaAsP distributed feedback laser Appl.

Carrier dynamics and gain saturation in quantum-well lasers

“…The gain compression coefficient is calculated with Equation 6to be E = 1.1 x lo-l7 cm3. The mrtttudes of E found in published experiments on bulk laser diode are (i) 7 x lo-cm3 to 6.7 x lo-l7 cm3 [2, 221 (from the frequency response); (ii) lo-l7 cm3 [23] (from subpicosecond gain dynamics); (iii) 5.4 x 10-l' cm3 [24] (using a parasitic-free optical modulation technique); and (iv) 1.2 x lOpi7 cm3 [25] (by measuring the intensity modulation spectra of current-modulated Fabry-Perot lasers). The experimental values of E for quantum-well lasers are (i) -3 x lo-l7 cm3 [26,271 (from the frequency response); (ii) 4.3 x lo-r7 cm3 [28] (by studying nondegenerate four-wave mixing); and (iii) 2.45 to 7.34 x lo-r7 cm3 [29] (by relative intensity noise measurements).…”

Semiclassical theory for a nonequilibrium steady state in microcavity semiconductor lasers

“…Not only on the laser frequency, the distribution function of carriers changes from the equilibrium Fermi distribution function in the on-lasing state, which is known as kinetic "hole-burning". It is an interesting question to ask how the hole-burning effect is modified in presence of both the strong light-matter and Coulomb interactions, and will be helpful in understanding mechanisms of the gain saturation [5,6] in case of the microcavity laser.…”