Origin of nonlinear gain saturation in index-guided InGaAsP laser diodes

Frankenberger, R.; Schimpe, R.

doi:10.1063/1.106855

Cited by 17 publications

(2 citation statements)

References 12 publications

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“…The relative contributions of spectral hole burning and carrier heating in a semiconductor laser are strongly dependent on the laser type and mate rial in the active region. [9][10][11][12] Theoretical studies indicate that strained quantum-well lasers exhibit enhanced carrier heating effects due to the extremely low threshold carrier density. 13 Carrier heating effects are manifested in the spontaneous emission spectra as a gain suppression at wavelengths below the gain maximum and closer to the peak of the spontaneous emission spectrum.…”

Section: Fig 6 Typical Heterostructures For (A) Gaas-based and (B) mentioning

confidence: 99%

Tunnel Injection Lasers

BHATTACHARYA¹

2000

Selected Topics in Electronics and Systems

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Carrier heating in conventional quantum well lasers can lead to several deleterious effects and are related to the transport and thermalization characteristics of injected carriers. The properties of a quantum well laser in which the electrons are directly transported to the lasing subband by tunneling is described here. The resulting de vice -a tunnel injection laser -is shown to have negligible gain compression, superior high-temperature performance, lower Auger recombination and wavelength chirp, and better high frequency modulation characteristics when compared to conventional lasers. All these improvements are attributed to the reduction of hot-carrier population in the active region of the laser. Results are presented here for lasers made with GaAs -and InP -based heterostructure systems.

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Section: Fig 6 Typical Heterostructures For (A) Gaas-based and (B) mentioning

confidence: 99%

Tunnel Injection Lasers

BHATTACHARYA¹

2000

Selected Topics in Electronics and Systems

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show abstract

“…The relative contributions of spectral hole burning and carrier heating in a semiconductor laser are strongly dependent on the laser type and material in the active region. [9][10][11][12] Theoretical studies indicate that strained quantum-well lasers exhibit enhanced carrier heating effects due to the extremely low threshold carrier density. 13 Carrier heating effects are manifested in the spontaneous emission spectra as a gain suppression at wavelengths below the gain maximum and closer to the peak of the spontaneous emission spectrum.…”

Section: Gaas-based Tunneling Injection Lasersmentioning

confidence: 99%

Tunnel Injection Lasers

Bhattacharya

1998

Int. J. Hi. Spe. Ele. Syst.

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Carrier heating in conventional quantum well lasers can lead to several deleterious effects and are related to the transport and thermalization characteristics of injected carriers. The properties of a quantum well laser in which the electrons are directly transported to the lasing subband by tunneling is described here. The resulting device -a tunnel injection laser -is shown to have negligible gain compression, superior high-temperature performance, lower Auger recombination and wavelength chirp, and better high frequency modulation characteristics when compared to conventional lasers. All these improvements are attributed to the reduction of hot-carrier population in the active region of the laser. Results are presented here for lasers made with GaAs -and InP -based heterostructure systems. 2 Int. J. Hi. Spe. Ele. Syst. 1998.09:847-866. Downloaded from www.worldscientific.com by UNIVERSITY OF QUEENSLAND on 08/16/15. For personal use only.

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