Measurement of the gain saturation spectrum in InGaAsP diode lasers

Frankenberger, R.; Schimpe, R.

doi:10.1109/islc.1990.764446

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Coupled Wave Equations Analysis1

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1991

1998

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Cited by 6 publications

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“…One is based on a modification of the material gain of a semiconductor laser by introducing an explicit dependence on the laser intensity. The physical origin of this term can be either spectral hole burning [ 181, [ 191 or carrier heating [20], [21]. Another mechanism is based on the spatial hole burning induced by the cavity standing wave [22].…”

Section: Coupled Wave Equations Analysismentioning

confidence: 99%

Nearly degenerate four-wave mixing in distributed feedback semiconductor lasers operating above threshold

Mecozzi

D’Ottavi

Hui

1993

IEEE J. Quantum Electron.

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Abstract-Nearly degenerate four-wave mixing in distributed feedback semiconductor lasers above threshold is investigated theoretically and experimentally. The experimental results reveal an almost symmetric amplification of probe and conjugate fields versus frequency with respect to zero pump-probe detuning, in contrast with observations in traveling wave amplifiers. The result of the theory, based on the coupled mode formalism, is a set of nonlinear differential equations which are solved in the mean field approximation. The theory is shown to match well with the experimental results when the effect of the nonlinear gain compression is taken into account.

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Section: Coupled Wave Equations Analysismentioning

confidence: 99%