We describe a microelectromechanical (MEM) relay technology for high-performance reconfigurable RF circuits. This microrelay, fabricated using surface micromachining, is a metal contact relay with electrical isolation between signal and drive lines. This relay provides excellent switching performance over a broad frequency band (insertion loss of 0.1 dB and isolation of 30 dB at 40 GHz), versatility in switch circuit configurations (microstrip and coplanar, shunt and series), and the capability for monolithic integration with high-frequency electronics. In addition, this MEM relay technology has demonstrated yields and lifetimes that are promising for RF circuit implementation.
This paper investigates manipulation tasks with arrays of microelectromechanical structures MEMS. We develop a model for the mechanics of microactuators and a theory of sensorless, parallel manipulation, and we describe e cient algorithms for their evaluation. The theory of limit surfaces o ers a purely geometric characterization of micro-scale contacts between actuator and moving object, which can be used to e ciently predict the motion of the object on an actuator array. We develop a theory of sensorless manipulation with microactuator arrays. It is shown how simple actuator control strategies can be used to uniquely align a p art up to symmetry. These manipulation strategies can be computed e ciently and do not require sensor feedback. This theory is applicable to a wide range of microactuator arrays. Our actuators are oscillating structures of single-crystal silicon fabricated in a low-temperature SCREAM process. They exhibit high aspect ratios and high vertical sti ness, which is of great advantage for an e ective implementation of our theory. Calculations show that arrays of these actuators can generate forces that are strong enough to levitate and move e.g. a piece of paper.
GaAs micro-electromechanical RF relays fabricated by surface micromachining techniques were characterized for their response to total ionizing dose. Microrelays with two different geometries were studied. For one geometry, changes in switch actuation voltage at moderate dose levels were observed. For an alternative geometry, no change in actuation voltage was observed. A mechanism for dielectric charge trapping and its effect on the electrostatic force is proposed.
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