Radiation effects in micro-electromechanical systems (MEMS): RF relays

McClure, S.; Edmonds, Larry D.; Mihailovich, R.E.; Johnston, A.H.; Alonzo, P.; DeNatale, J.F.; Lehman, John H.; Yui, C.

doi:10.1109/tns.2002.805406

Cited by 69 publications

(37 citation statements)

References 8 publications

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“…44 rf switches from Rockwell Scientific Company ͑Thousand Oaks, California͒ reported in Ref. 34 showed no change in static characteristics at doses of up to 150 krad for one design developed to reduce dielectric charging. For a more conventional design, the device's calibration started to change at doses of 10 krad, although the device continued to operate after doses of 300 krad, but with an 80% increase in required drive voltage.…”

Section: Electrostatic Microelectromechanical System Sensors and Actumentioning

confidence: 98%

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Radiation sensitivity of microelectromechanical system devices

Shea

2009

J. Micro/Nanolith. MEMS MOEMS

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Abstract. The sensitivity of microelectromechanical system ͑MEMS͒ devices to radiation is reviewed, with an emphasis on radiation levels representative of space missions rather than of operation in nuclear reactors. As a purely structural material, silicon has shown no mechanical degradation after radiation doses in excess of 100 Mrad. MEMS devices, even when excluding control/readout electronics, have, however, failed at doses of only 20 krad, though some devices have been shown to operate correctly for doses greater than 10 Mrad. Radiation sensitivity depends strongly on the sensing or actuation principle, device design, and materials, and is linked primarily to the impact on device operation of radiation-induced trapped charge in dielectrics. MEMS devices operating on electrostatic principles can be highly sensitive to charge accumulation in dielectric layers, especially for designs with dielectrics located between moving parts. In contrast, thermally and electromagnetically actuated MEMS are much more radiation tolerant. MEMS operating on piezoresitive principles start to slowly degrade at low doses, but do not fail catastrophically until doses of several Mrad. A survey of all published reports of radiation effects on MEMS is presented, as well as a summary of techniques that can improve their radiation tolerance.

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Section: Electrostatic Microelectromechanical System Sensors and Actumentioning

confidence: 98%

“…Tests on accelerometers and rf switches showed a marked change in calibration at doses above 30 krad. [32][33][34] Those failures were attributed to trapped charge in dielectric films. These doses are for unpackaged devices, so that the sensor element is directly irradiated.…”

Section: Survey Of Radiation Tests Performed Onmentioning

confidence: 99%

Radiation sensitivity of microelectromechanical system devices

Shea

2009

J. Micro/Nanolith. MEMS MOEMS

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“…Knudson and Lee [103], [104] tested the performance of MEMS accelerometers under nuclear radiation and found that the change in output voltage was caused by charge buildup in dielectric layers beneath the moving mass. McClure [105] proposed a mechanism for creating a charge distribution in the dielectric of the MEMS device exposed to nuclear radiation. Newman et al [106] presented the contact surface of a wafer-packaged RF MEMS switch damaged by ESD.…”

Section: B Dielectric Breakdown Due To Electrostatic Dischargementioning

confidence: 99%

MEMS Reliability Review

Huang

Vasan

Doraiswami

et al. 2012

IEEE Trans. Device Mater. Relib.

158

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Abstract-Microelectromechanical systems (MEMS) represents a technology that integrates miniaturized mechanical and electromechanical components (i.e., sensors and actuators) that are made using microfabrication techniques. MEMS devices have become an essential component in a wide range of applications, ranging from medical and military to consumer electronics. As MEMS technology is implemented in a growing range of areas, the reliability of MEMS devices is a concern. Understanding the failure mechanisms is a prerequisite for quantifying and improving the reliability of MEMS devices. This paper reviews the common failure mechanisms in MEMS, including mechanical fracture, fatigue, creep, stiction, wear, electrical short and open, contamination, their effects on devices' performance, inspection techniques, and approaches to mitigate those failures through structure optimization and material selection.

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“…In both cases counteracting the effects of trapped charge is possible by following basic rules such as minimizing the volume of dielectrics in critical areas and by designing devices whose operation is insensitive to trapped charge [1]. This can significantly improve the reliability [2] but cannot eliminate material-specific limitations such as the degradation of the mechanical and electrical properties of the materials themselves. Appropriate material selection is therefore at the heart of engineering of reliable MEMS and is one of the main factors determining the performance and the failure modes of devices.…”

Section: Icro-electromechanical Systems (Mems)mentioning

confidence: 99%

Proton-Radiation Tolerance of Silicon and SU-8 as Structural Materials for High-Reliability MEMS

Bandi

Polido-Gomes

Neels

et al. 2013

J. Microelectromech. Syst.

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Abstract-The susceptibility of single-crystal silicon and SU-8 resonators to proton-radiation induced degradation was investigated. Both materials are in widespread use for microsystems structures, thus the stability of the mechanical properties must be ensured over the full device lifecycle. Effects of spacerelevant proton doses were examined by monitoring minute changes in the Young's modulus and by structural investigations using high-resolution X-ray diffraction (HRXRD). Single crystal silicon resonators were exposed to 10 MeV and 60 MeV protons with doses up to 10 13 cm −2 . Even at the highest doses neither a change of the Young's modulus was observed nor did Xray diffraction indicate the formation of elevated concentrations of structural defects. The compatibility of SU-8 with inorbit radiation environments was investigated at fluences of 10 10 -10 12 cm −2 using protons with energies ranging from 10 MeV to 200 MeV. Its elastic modulus changed by less than 5.5% at the highest doses.[2013-0009]

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Radiation effects in micro-electromechanical systems (MEMS): RF relays

Cited by 69 publications

References 8 publications

Radiation sensitivity of microelectromechanical system devices

Radiation sensitivity of microelectromechanical system devices

MEMS Reliability Review

Proton-Radiation Tolerance of Silicon and SU-8 as Structural Materials for High-Reliability MEMS

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