A DC-to-40 GHz four-bit RF MEMS true-time delay network

Kim, M.; Hacker, J.B.; Mihailovich, R.E.; DeNatale, J.F.

doi:10.1109/7260.914301

Cited by 135 publications

(54 citation statements)

References 5 publications

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“…Here, MEMS capacitive membrane switches were employed, with C ON /C OFF B100 and an actuation voltage of 45 V. The 5% fractional bandwidth was due to the extensive use of resonant stubs; however, at 34 GHz the insertion loss was low at 2.5 dB and the return loss was 415 dB. In the past couple of years, a team from the Rockwell Science Center have demonstrated high performance DC to 40 GHz 3-bit and 4-bit true time delay networks, using SPDT switches, on GaAs [40,41]. Figure 7 shows the measured performance of this state-of-the-art RF MEMS phase shifter.…”

Section: Phase Shiftersmentioning

confidence: 99%

Review of radio frequency microelectromechanical systems technology

Lucyszyn

2004

IEE Proceedings - Science, Measurement and Technology

124

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A review of radio frequency microelectromechanical systems (RF MEMS) technology, from the perspective of its enabling technologies (e.g. fabrication, RF micromachined components and actuation mechanisms) is presented. A unique roadmap is given that shows how enabling technologies, RF MEMS components, RF MEMS circuits and RF microsystems packaging are linked together; leading towards enhanced integrated subsystems. An overview of the associated fabrication technologies is given, in order to distinguish between the two distinct classes of RF microsystems' component technologies; non-MEMS micromachined and true MEMS. An extensive literature survey has been undertaken and key papers have been cited; from these, the motivations behind different RF MEMS technologies are highlighted. The importance of understanding the limitations for realising new and innovative ideas in RF MEMS is discussed. Finally, conclusions are drawn as to where future RF MEMS technology may lead. It is likely that the switch will continue to be the most important RF MEMS component, with future work investigating its enhanced functionality, subsystem integration and volume production. The focus of RF MEMS circuits will shift from the digital phase shifter to high-Q tuneable filters.

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Section: Phase Shiftersmentioning

confidence: 99%

Review of radio frequency microelectromechanical systems technology

Lucyszyn

2004

IEE Proceedings - Science, Measurement and Technology

124

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“…The actuation voltage, V p , of the MEMS switch with a spring constant, k, is given by: (6) where ε 0 is the permittivity of free space, g 0 is the gap between the membrane and electrode, and; A is given by the area of electrodes that is actually used for actuation operation.…”

Section: Actuation Voltagementioning

confidence: 99%

“…They have evolved into switches with better isolation, lower resistive loss, high power handling capability, and negligible power consumption promising beneficial utilization in many current and future RF spectra and in microwave and millimeter wave systems. The design of the RF MEMS series switches has reached a mature level, with many metal contact switches [5][6][7][8] available today.…”

Section: Introductionmentioning

confidence: 99%

Design Aspects of a New Reliable Torsional Switch with Excellent RF Response

Gogna¹,

Jha²,

Gaba³

et al. 2016

Transactions on Electrical and Electronic Materials

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This paper proposes a metal contact RF MEMS switch which utilizes a see-saw mechanism to acquire a switching action. The switch was built on a quartz substrate and involves vertical deflection of the beam under an applied actuation voltage of 5.46 volts over a signal line. The see-saw mechanism relieves much of the operation voltage required to actuate the switch. The switch has a stiff beam eliminating any stray mechanical forces. The switch has an excellent isolation of -90.9 dB (compared to -58 dB in conventional designs [3]), the insertion of -0.2 dB, and a wide bandwidth of 88 GHz (compared to 40 GHz in conventional design [16]) making the switch suitable for wide band applications.

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“…MEMS series switches are used in many different phase shifter designs, such as 1) switched t-lines [17], 2) reflection type or 3) reflection type with 3-dB couplers. The switched t-line designs result in insignificant phase noise since the MEMS switches must be in the closed position to pass the energy in the different delay sections.…”

Section: Brownian Noise In Mems Series Switchesmentioning

confidence: 99%

Phase Noise Analysis of MEMS-Based Phase Shifters

Rebeiz

2001

2001 31st European Microwave Conference

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Abstract-The effect of Brownian noise on Micro-Electro-Mechanical (MEMS)-based circuits has been calculated for MEMS-based circuits (phase shifters, delay circuits). The calculations are done for capacitive shunt MEMS switches and metal-to-metal contact series MEMS switches. The phase noise due to Brownian motion is negligible for MEMS switches with k 10 N/m, g 0 > 2 µm, Q > 0.5, and f 0 50 kHz. It is also found that metal-to-metal contact series switches result in much less phase noise than standard capacitive shunt switches. The phase noise increases rapidly for low springconstant bridges (k =0.2-4 N/m), low-height bridges, and for bridges with a large mechanical damping (Q < 0.3). Also, varactor-based designs result in 30-40 dB more phase noise than switch-based circuits. The paper proves that microwave passive circuits built using MEMS switches (with a proper mechanical design) can be used in most commercial and military applications without any phase noise penalty.

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A DC-to-40 GHz four-bit RF MEMS true-time delay network

Cited by 135 publications

References 5 publications

Review of radio frequency microelectromechanical systems technology

Review of radio frequency microelectromechanical systems technology

Design Aspects of a New Reliable Torsional Switch with Excellent RF Response

Phase Noise Analysis of MEMS-Based Phase Shifters

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