We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS.
We have studied small signal frequency response of a spin laser. We have shown that the response is characterized by two distinct resonant peaks corresponding to the two polarization modes of the spin laser. It is observed that the modulation bandwidth of a spin laser can be smaller or larger than that of a conventional laser depending upon the current bias and spin relaxation time constant. A small value for spin relaxation constant may not be detrimental for modulation bandwidth. This anomalous observation is explained by considering both the amplitude and phase response of the two polarization modes. A spin laser can act as a combination of low-pass and bandpass filters. The passband frequency range is tunable by external bias. We have also studied the evolution of resonant peaks and modulation bandwidth as a function of spin relaxation time constant.
The effect of feature sizes on the characteristics of lateral spintronic devices have been investigated experimentally and theoretically. It is demonstrated that confining spin-transport in the active region of a device enhances magnitude of the spin-dependent response substantially. Numerical simulation of spin-transport corroborates the experimental observations. Device characteristics are found to be a strong function of spin-polarizer and analyzer dimensions. The response is observed to attain a peak value for an optimum device feature size, and this is seen to be a function of temperature. Spin dependent effects become weaker for very small and very large devices.
We report room temperature ferromagnetism in crystalline GaCrN prepared by Cr deposition and drive-in diffusion with Curie temperature much above 300 K. The Curie temperature increases with increasing active Cr concentration. Cr doped GaN acts as an n-type material with significant increase in electron carrier concentration due to the presence of Cr. Optical property of GaCrN is found to be very similar to GaN with an additional peak at 3.29 eV due to Cr. The hysteresis measurements show that the ferromagnetic ordering is maintained up to 300 K with no significant change in saturation magnetization.
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