Electrical spin injection using GaCrN in a GaN based spin light emitting diode

Banerjee, Debashree; Adari, R.; Sankaranarayan, S.; Kumar, Anup; Ganguly, Swaroop; Aldhaheri, Rabah W.; Hussain, Mohammad Asif; Balamesh, Ahmed; Saha, D.

doi:10.1063/1.4848836

Cited by 24 publications

(18 citation statements)

References 18 publications

(20 reference statements)

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“…A spin-LED with higher values of circular polarization (6% at 5 K and 2.5% at 200 K) was reported with n-type GaCrN as the spin injector. The emission wavelength of this device was 410 nm [266]. A major breakthrough was made in 2014, when the first nitride-based spin-LED was reported with a 10.9% circular polarization at room temperature, under a low magnetic field of 0.35 T [267].…”

Section: Nitride-based Spin Leds and Lasersmentioning

confidence: 98%

III-Nitride Light-Emitting Devices

et al. 2021

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III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

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Section: Nitride-based Spin Leds and Lasersmentioning

confidence: 98%

III-Nitride Light-Emitting Devices

et al. 2021

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“…In the applications of spin-LED and spin lasers with surface emission geometries, such as 3D displays, the actually used spin injector (GaMnN, 21,22 GaCrN, 23 Fe 3 O 4 , 24,27 and CoFe 25,26 ) with inplane magnetization anisotropy is not possible for practical application. This is because, according to the optical selection rules, 28 the magnetization of the spin injector has to be maintained perpendicular to the quantum-well (QW) LED surface in order to emit circularly polarized light from the surface.…”

Section: Introductionmentioning

confidence: 99%

Evidence of a strong perpendicular magnetic anisotropy in Au/Co/MgO/GaN heterostructures

et al. 2019

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“…In GaN-based spin LEDs only a small circular polarization of electroluminescence was detected at 200 K [43] as well as at 300 K in the applied magnetic field [44]. These limitations could be overcome in electrical spin injection or extraction, as shown (In,Ga)N/GaN-based nanodiscs and nanorods covered by Fe 3 O 4 nanoparticles [29,30,45].…”

Section: Introductionmentioning

confidence: 99%

“…However, due to the relatively weak SOC in nitride-based materials [42], the energy separation for the topmost valence bands is typically ∼10-20 meV, comparable to the energy of the broadening effects by impurities and room temperature, ultimately leading to inefficient optical spin injection [36]. In GaN-based spin LEDs only a small circular polarization of electroluminescence was detected at 200 K [43] as well as at 300 K in the applied magnetic field [44]. These limitations could be overcome in electrical spin injection or extraction, as shown (In,Ga)N/GaN-based nanodiscs and nanorods covered by Fe 3 O 4 nanoparticles [29,30,45].…”

Section: Introductionmentioning

confidence: 99%

Wurtzite spin lasers

Faria

Chen

et al. 2017

Phys. Rev. B

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Semiconductor lasers are strongly altered by adding spin-polarized carriers. Such spin lasers could overcome many limitations of their conventional (spin-unpolarized) counterparts. While the vast majority of experiments in spin lasers employed zinc-blende semiconductors, the room temperature electrical manipulation was first emonstrated in wurtzite GaN-based lasers. However, the underlying theoretical description of wurtzite spin lasers is still missing. To address this situation, focusing on (In,Ga)N-based wurtzite quantum wells, we develop a theoretical framework in which the calculated microscopic spin-dependent gain is combined with a simple rate equation model. A small spin-orbit coupling in these wurtzites supports simultaneous spin polarizations of electrons and holes, providing unexplored opportunities to control spin lasers. For example, the gain asymmetry, as one of the key figures of merit related to spin amplification, can change the sign by simply increasing the carrier density. The lasing threshold reduction has a nonmonotonic depenedence on electron spin polarization, even for a nonvanishing hole spin polarization.

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Electrical spin injection using GaCrN in a GaN based spin light emitting diode

Cited by 24 publications

References 18 publications

III-Nitride Light-Emitting Devices

III-Nitride Light-Emitting Devices

Evidence of a strong perpendicular magnetic anisotropy in Au/Co/MgO/GaN heterostructures

Wurtzite spin lasers

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