No abstract

External fields are a powerful tool to probe optical excitations in a material. The linear energy shift of an excitation in a magnetic field is quantified by its effective g factor. Here we show how exciton g factors and their sign can be determined by converged first-principles calculations. We apply the method to monolayer excitons in semiconducting transition metal dichalcogenides and to interlayer excitons in MoSe 2 /WSe 2 heterobilayers and obtain good agreement with recent experimental data. The precision of our method allows us to assign measured g factors of optical peaks to specific transitions in the band structure and also to specific regions of the samples. This revealed the nature of various, previously measured interlayer exciton peaks. We further show that, due to specific optical selection rules, g factors in van der Waals heterostructures are strongly spinand stacking-dependent. The calculation of orbital angular momenta requires the summation over hundreds of bands, indicating that for the considered two-dimensional materials the basis set size is a critical numerical issue. The presented approach can potentially be applied to a wide variety of semiconductors.

When considering transition-metal dichalcogenides (TMDCs) in van der Waals (vdW) heterostructures for periodic ab-initio calculations, usually, lattice mismatch is present, and the TMDC needs to be strained. In this study we provide a systematic assessment of biaxial strain effects on the orbital, spin-orbit, and optical properties of the monolayer TMDCs using ab-initio calculations. We complement our analysis with a minimal tight-binding Hamiltonian that captures the low-energy bands of the TMDCs around K and K' valleys. We find characteristic trends of the orbital and spinorbit parameters as a function of the biaxial strain. Specifically, the orbital gap decreases linearly, while the valence (conduction) band spin splitting increases (decreases) nonlinearly in magnitude when the lattice constant increases. Furthermore, employing the Bethe-Salpeter equation and the extracted parameters, we show the evolution of several exciton peaks, with biaxial strain, on different dielectric surroundings, which are particularly useful for interpreting experiments studying strain-tunable optical spectra of TMDCs.

Proximity effects in two-dimensional (2D) van der Waals heterostructures offer controllable ways to tailor the electronic band structure of adjacent materials. Proximity exchange in particular is important for making materials magnetic without hosting magnetic ions. Such synthetic magnets could be used for studying magnetotransport in high-mobility 2D materials, or magneto-optics in highly absorptive nominally nonmagnetic semiconductors. Using first-principles calculations, we show that the proximity exchange in monolayer MoSe2 and WSe2 due to ferromagnetic monolayer CrI3 can be tuned (even qualitatively) by twisting and gating. Remarkably, the proximity exchange remains the same when using antiferromagnetic CrI3 bilayer, paving the way for optical and electrical detection of layered antiferromagnets. Interestingly, the proximity exchange is opposite to the exchange of the adjacent antiferromagnetic layer. Finally, we show that the proximity exchange is confined to the layer adjacent to CrI3, and that adding a separating hBN barrier drastically reduces the proximity effect. We complement our ab initio results with tight-binding modeling and solve the Bethe-Salpeter equation to provide experimentally verifiable optical signatures (in the exciton spectra) of the proximity exchange effects.

No abstract

Nanowires induce mechanical deformations in monolayer semiconductors, creating potential channels that guide optical excitations.

A systematic numerical investigation of spin-orbit fields in the conduction bands of III-V semiconductor nanowires is performed. Zinc-blende InSb nanowires are considered along [001], [011], and [111] directions, while wurtzite InAs nanowires are studied along [0001] and [1010] or [1120] directions. Robust multiband k · p Hamiltonians are solved by using plane wave expansions of realspace parameters. In all cases the linear and cubic spin-orbit coupling parameters are extracted for nanowire widths from 30 to 100 nm. Typical spin-orbit energies are on the µeV scale, except for InAs wurtzite nanowires grown along [1010] or [1120], in which the spin-orbit energy is about meV, largely independent of the wire diameter. Significant spin-orbit coupling is obtained by applying a transverse electric field, causing the Rashba effect. For an electric field of about 4 mV/nm the obtained spin-orbit energies are about 1 meV for both materials in all investigated growth directions. The most favorable system, in which the spin-orbit effects are maximal, are InAs WZ nanowires grown along [1010] or [1120], since here spin-orbit energies are giant (meV) already in the absence of electric field. The least favorable are InAs WZ nanowires grown along [0001], since here even the electric field does not increase the spin-orbit energies beyond 0.1 meV. The presented results should be useful for investigations of optical orientation, spin transport, weak localization, and superconducting proximity effects in semiconductor nanowires. arXiv:1802.06734v2 [cond-mat.mes-hall] 30 Apr 2018Appendix A: Plane wave expansion and numerical details

Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of wurtzite crystal phase. Despite the reports in literature of ab initio band structures for these wurtzite compounds, we still lack effective multiband models and parameter sets that can be simply used to investigate physical properties of such systems, for instance, under quantum confinement effects. In order to address this deficiency, in this study we calculate the ab initio band structure of bulk InAs and InP in wurtzite phase and develop an 8×8 k.p Hamiltonian to describe the energy bands around Γ point. We show that our k.p model is robust and can be fitted to describe the important features of the ab initio band structure. The correct description of the spin splitting effects that arise due to the lack of inversion symmetry in wurtzite crystals, is obtained with the k-dependent spin-orbit term in the Hamiltonian, often neglected in the literature. All the energy bands display a Rashba-like spin texture for the in-plane spin expectation value. We also provide the density of states and the carrier density as functions of the Fermi energy. Alternatively, we show an analytical description of the conduction band, valid close to Γ point. The same fitting procedure is applied to the 6×6 valence band Hamiltonian. However, we find that the most reliable approach is the 8×8 k.p Hamiltonian for both compounds. The k.p Hamiltonians and parameter sets that we develop in this paper provide a reliable theoretical framework that can be easily applied to investigate electronic, transport, optical, and spin properties of InAs-and InP-based nanostructures.