We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS.
We have studied small signal frequency response of a spin laser. We have shown that the response is characterized by two distinct resonant peaks corresponding to the two polarization modes of the spin laser. It is observed that the modulation bandwidth of a spin laser can be smaller or larger than that of a conventional laser depending upon the current bias and spin relaxation time constant. A small value for spin relaxation constant may not be detrimental for modulation bandwidth. This anomalous observation is explained by considering both the amplitude and phase response of the two polarization modes. A spin laser can act as a combination of low-pass and bandpass filters. The passband frequency range is tunable by external bias. We have also studied the evolution of resonant peaks and modulation bandwidth as a function of spin relaxation time constant.
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