We investigate the variations that occur with changes in the number of layers and with the use of the assist beam main and assist beam energy on the morphology of HfO 2 /SiO 2 quarter wave stacks deposited by dual ion beam sputtering. We show how the addition of sequential HfO 2 /SiO 2 bilayers, up to eight, affects the surface roughness and micro-crystallinity of the top HfO 2 layer. We also show that use of the assist source significantly smooths the surface while simultaneously reducing microcrystallinity. The HfO 2 /SiO 2 structures are very robust and can withstand fluences in excess of 3 J/cm 2 generated by 1ps pulses from a chirped amplified Ti:Sapphire laser.
We show that the concentration of oxygen interstitials trapped in Sc2O3 films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in Sc2O3 films, in significantly high concentrations, i.e., ∼10(18) cm(-3). These results show a correlation between the increase of oxygen interstitials and the increase in stress and optical absorption in the films. Sc2O3 films with the lowest stress and optical absorption loss at 1 μm wavelength were obtained when using a low oxygen partial pressure and low beam voltage.
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