We show that the concentration of oxygen interstitials trapped in Sc2O3 films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in Sc2O3 films, in significantly high concentrations, i.e., ∼10(18) cm(-3). These results show a correlation between the increase of oxygen interstitials and the increase in stress and optical absorption in the films. Sc2O3 films with the lowest stress and optical absorption loss at 1 μm wavelength were obtained when using a low oxygen partial pressure and low beam voltage.
A simple, highly sensitive technique for measuring absorbed power in thin film dielectrics based on thermal lensing is demonstrated. Absorption of an amplitude modulated or pulsed incident pump beam by a thin film acts as a heat source that induces thermal lensing in the substrate. A second continuous wave collimated probe beam defocuses after passing through the sample. Determination of absorption is achieved by quantifying the change of the probe beam profile at the focal plane using a four-quadrant detector and cylindrical lenses to generate a focus error signal. This signal is inherently insensitive to deflection, which removes noise contribution from point beam stability. A linear dependence of the focus error signal on the absorbed power is shown for a dynamic range of over 10. This technique was used to measure absorption loss in dielectric thin films deposited on fused silica substrates. In pulsed configuration, a single shot sensitivity of about 20 ppm is demonstrated, providing a unique technique for the characterization of moving targets as found in thin film growth instrumentation.
Ta2O5/SiO2 high reflection (HR) interference coatings for λ∼1 μm offer superior performance at high irradiance conditions. However, these coatings are not good candidates for high peak power conditions in comparison to HfO2/SiO2 multilayer stacks. Here we show that the modification of the top layers design of a quarter wave Ta2O5/SiO2 high reflector leads to 4-5 fold increase in the laser damage fluence compared to a quarter wave (Ta2O5/SiO2)15 when tested at λ=1.03 μm using pulse durations of 0.19 and 4 ns and peak power densities of 43.5 and 216 GW/cm2. One of the designs achieved a laser damage threshold fluence of 174 J/cm2 at 4 ns, which is 10% higher than that of a HfO2/SiO2 quarter wave design.
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