Point defects in Sc₂O₃ thin films by ion beam sputtering

Abstract

We show that the concentration of oxygen interstitials trapped in Sc2O3 films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in Sc2O3 films, in significantly high concentrations, i.e., ∼10(18) cm(-3). These results show a correlation between the increase of oxygen interstitials and the increase in stress and optical absorption in the films. Sc2O3 films with the lowest stress and optical absorption loss at 1 μm wavelength were obtained when using a low oxygen partial pressure and low beam voltage.

Scaling diode-pumped, high energy picosecond lasers to kilowatt average powers

“…The improved thermal parameters at cryogenic temperatures compensates the larger thickness of this geometry compared to thin disk lasers (a few millimeter vs. a few hundred microns), with the additional advantage of increased pump absorption with reducing the complexity of the pump optics. Using this scheme, we have developed high energy CPA lasers that were used for a number of applications including the first demonstration of a diode-pumped, plasma-based soft X-ray laser [35] , average power tabletop lasers at [48, 49] and 13.9 nm [50] , Laser-induced damage threshold (LIDT) measurements of multilayer coatings [51] , driving a 100 Hz repetition rate, millijoule energy OPCPA at [52] and the characterization of the emission from a laser produced plasma source for beyond EUV (BEUV) lithography [53] .…”

Investigation of effects of assisted ion bombardment on mechanical loss of sputtered tantala thin films for gravitational wave interferometers

“…The deposition rate decreased from 3.6 (c1) to 0.9 Å=s (c2) when the main ion beam voltage and beam current were lowered. These deposition rates are indicative of complete oxide coverage of the Ta target [21]. Nevertheless, the sputtered particles that reach the substrate are a combination of Ta atoms and tantalum oxide fragments, the majority of which were found to be Ta 2 O 2 ring clusters [22].…”

Relationship between Oxygen Defects and Properties of Scandium Oxide Films Prepared by Ion-Beam Sputtering

“…Scandium oxide (Sc 2 O 3 ) is an important kind of optical compound and is considered to be one of the most promising optical materials due to the high refractive index in the UV wavelength range [1][2][3]. Moreover, it has high damage resistance to laser irradiation, which is of high importance for high-power laser applications [2,4,5].…”

“…Krous et al [22] indicated that there are oxygen defects in Sc 2 O 3 films deposited by IBS. Langston et al [3] shown that a correlation exists between the oxygen interstitials in Sc 2 O 3 films and optical absorption in the films. Fu et al [5] studied the laser-induced damage of Sc 2 O 3 -SiO 2 mixtures for sub-picosecond pulses.…”